2SC5087
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087
VHF~UHF Band Low Noise Amplifier Applications
•
•
Low noise figure, high gain.
NF = 1.1dB, |S
21e
|
2
= 13dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
Rating
20
12
3
40
80
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
―
―
2-3J1C
Weight: 0.012 g (typ.)
Microwave Characteristics
(Ta
=
25°C)
Characteristics
Transition frequency
Insertion gain
Symbol
f
T
⎪S
21e
⎪
(1)
⎪S
21e
⎪
(2)
NF (1)
NF (2)
2
2
Test Condition
V
CE
=
10 V, I
C
=
20 mA
V
CE
=
10 V, I
C
=
20 mA, f
=
500 MHz
V
CE
=
10 V, I
C
=
20 mA, f
=
1 GHz
V
CE
=
10 V, I
C
=
5 mA, f
=
500 MHz
V
CE
=
10 V, I
C
=
5 mA, f
=
1 GHz
Min
5
⎯
9.5
⎯
⎯
Typ.
7
18
13
1
1.1
Max
⎯
⎯
⎯
⎯
2
Unit
GHz
dB
Noise figure
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note 1)
C
ob
C
re
Test Condition
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
10 V, I
C
=
20 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz (Note 2)
Min
⎯
⎯
80
⎯
⎯
Typ.
⎯
⎯
⎯
1.1
0.65
Max
1
1
240
1.6
1.05
pF
pF
Unit
μA
μA
Note 1: h
FE
classification O: 80 to 160, Y: 120 to 240
Note 2: C
re
is measured by 3 terminal method with capacitance bridge.
Start of commercial production
1993-10
1
2014-03-01
MCU
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