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RN1903,LF(CT

Description
TRANS 2NPN PREBIAS 0.2W US6
CategoryDiscrete semiconductor    The transistor   
File Size461KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN1903,LF(CT Overview

TRANS 2NPN PREBIAS 0.2W US6

RN1903,LF(CT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
RN1901~RN1906
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1901, RN1902, RN1903
RN1904, RN1905, RN1906
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2901 to RN2906
Equivalent Circuit and Bias Resistor Values
Type No.
RN1901
RN1902
RN1903
RN1904
RN1905
RN1906
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
US6
JEDEC
JEITA
TOSHIBA
2-2J1A
Weight: 6.8mg(typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1901 to 1906
RN1901 to 1906
RN1901 to 1904
RN1905, 1906
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1990-12
1
2014-03-01

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