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74HC4066D(BJ)

Description
IC SERIES QUAD BILATERAL SWITCH
Categorysemiconductor    Analog mixed-signal IC   
File Size222KB,11 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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74HC4066D(BJ) Overview

IC SERIES QUAD BILATERAL SWITCH

74HC4066D(BJ) Parametric

Parameter NameAttribute value
switching circuit-
Multiplexer/Demultiplexer Circuit1:1
Number of circuits4
On-resistance (maximum value)80 ohms
Channel-to-channel matching (ΔRon)5 ohms (standard)
Voltage - Power Supply, Single (V+)2 V ~ 12 V
Voltage - Power Supply, Dual (V±)-
Switching time (Ton, Tof) (maximum value)12ns,12ns
-3db bandwidth200MHz
charge injection-
Channel capacitance (CS(off), CD(off))3pF
Current - Leakage (IS(off)) (maximum)100nA
crosstalk-60dB @ 1MHz
Operating temperature-40°C ~ 85°C
Package/casing14-SOIC (0.154", 3.90mm wide)
Supplier device packaging14-SOIC
74HC4066D
CMOS Digital Integrated Circuits Silicon Monolithic
74HC4066D
1. Functional Description
Quad Bilateral Switch
2. General
The 74HC4066D is high-speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C
2
MOS
technology.
It consists of four independent high speed switches capable of controlling either digital or analog signals while
maintaining the CMOS low power dissipation.
Control input(C) is provided to control the switch. The switch turns ON while the C input is High, and the switch
turns OFF while low.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
Low power dissipation: I
CC
= 1.0
µA
(max) at V
CC
= 6.0 V, T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
Low ON resistance: R
ON
= 50
(typ.) at V
CC
= 9.0 V, V
I/O
= V
CC
or GND
High degree of linearity: THD = 0.05 % (typ.) at V
CC
= 4.5 V
4. Packaging
SOIC14
Start of commercial production
©2016 Toshiba Corporation
1
2016-10
2016-10-26
Rev.1.0

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