74HC4066D
CMOS Digital Integrated Circuits Silicon Monolithic
74HC4066D
1. Functional Description
•
Quad Bilateral Switch
2. General
The 74HC4066D is high-speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C
2
MOS
technology.
It consists of four independent high speed switches capable of controlling either digital or analog signals while
maintaining the CMOS low power dissipation.
Control input(C) is provided to control the switch. The switch turns ON while the C input is High, and the switch
turns OFF while low.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
Low power dissipation: I
CC
= 1.0
µA
(max) at V
CC
= 6.0 V, T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
Low ON resistance: R
ON
= 50
Ω
(typ.) at V
CC
= 9.0 V, V
I/O
= V
CC
or GND
High degree of linearity: THD = 0.05 % (typ.) at V
CC
= 4.5 V
4. Packaging
SOIC14
Start of commercial production
©2016 Toshiba Corporation
1
2016-10
2016-10-26
Rev.1.0
74HC4066D
5. Pin Assignment
6. Marking
7. Truth Table
Control
H
L
Switch Function
On
Off
8. System Diagram (per circuit)
©2016 Toshiba Corporation
2
2016-10-26
Rev.1.0
74HC4066D
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Switch I/O voltage
Input diode current
I/O diode current
Switch through current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
I/O
I
IK
I
I/OK
I
T
I
CC
P
D
T
stg
Note
Rating
-0.5 to 13
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Switch I/O voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
I/O
T
opr
t
r
,t
f
Test Condition
Rating
2.0 to 12
0 to V
CC
0 to V
CC
-40 to 85
0 to 50
Unit
V
V
V
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-10-26
Rev.1.0
74HC4066D
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
9.0
12.0
Low-level input voltage
V
IL
2.0
4.5
9.0
12.0
ON-resistance
R
ON
V
IN
= V
IH
V
I/O
= V
CC
to GND
I
I/O
≤
1 mA
V
IN
= V
IH
V
I/O
= V
CC
or GND
I
I/O
≤
1 mA
4.5
9.0
12.0
2.0
4.5
9.0
12.0
Difference of ON-resistance
between switches
∆R
ON
V
IN
= V
IH
V
I/O
= V
CC
to GND
I
I/O
≤
1 mA
V
OS
= V
CC
or GND
V
IS
= GND to V
CC
V
IN
= V
IL
V
OS
= V
CC
or GND
V
IN
= V
IH
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
9.0
12.0
12.0
Min
1.50
3.15
6.30
8.40
Typ.
96
55
45
160
70
50
45
10
5
5
Max
0.50
1.35
2.70
3.60
170
85
80
100
75
70
±0.1
µA
Ω
Ω
V
Unit
V
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON, output open)
Control input leakage current
Quiescent supply current
I
OFF
I
I/O
I
IN
I
CC
12.0
12.0
6.0
9.0
12.0
±0.1
±0.1
1.0
4.0
8.0
µA
µA
µA
©2016 Toshiba Corporation
4
2016-10-26
Rev.1.0
74HC4066D
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
9.0
12.0
Low-level input voltage
V
IL
2.0
4.5
9.0
12.0
ON-resistance
R
ON
V
IN
= V
IH
V
I/O
= V
CC
to GND
I
I/O
≤
1 mA
V
IN
= V
IH
V
I/O
= V
CC
or GND
I
I/O
≤
1 mA
4.5
9.0
12.0
2.0
4.5
9.0
12.0
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON, output open)
Control input leakage current
Quiescent supply current
I
OFF
V
OS
= V
CC
or GND
V
IS
= GND to V
CC
V
IN
= V
IL
V
OS
= V
CC
or GND
V
IN
= V
IH
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
12.0
Min
1.50
3.15
6.30
8.40
Max
0.50
1.35
2.70
3.60
200
100
90
130
95
90
±1.0
µA
Ω
V
Unit
V
I
I/O
I
IN
I
CC
I
CC
I
CC
12.0
12.0
6.0
9.0
12.0
±1.0
±1.0
10.0
40.0
80.0
µA
µA
µA
©2016 Toshiba Corporation
5
2016-10-26
Rev.1.0
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