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SS1H4LW RVG

Description
DIODE SCHOTTKY 40V 1A SOD123W
Categorysemiconductor    Discrete semiconductor   
File Size266KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SS1H4LW RVG Overview

DIODE SCHOTTKY 40V 1A SOD123W

SS1H4LW RVG Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)40V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf650mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500nA @ 40V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingSOD-123W
Supplier device packagingSOD123W
Operating Temperature - Junction-55°C ~ 175°C
SS1H4LW-SS1H20LW
Taiwan Semiconductor
CREAT BY ART
1A, 40V - 200V Surface Mount Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123W
MECHANICAL DATA
Case:
SOD-123W
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
16 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
0.65
0.70
SYMBOL
SS1H4LW SS1H6LW SS1H10LW SS1H15LW SS1H20LW
UNIT
1H4LW
40
28
40
1H6LW
60
42
60
1H10LW
100
70
100
1
30
0.80
0.5
0.3
25
80
- 55 to +175
- 55 to +175
0.2
0.1
0.85
1H15LW
150
105
150
1H20LW
200
140
200
V
V
V
A
A
V
µA
mA
°C/W
°C
°C
Version: A1606

SS1H4LW RVG Related Products

SS1H4LW RVG SS1H20LW RVG SS1H15LW RVG SS1H10LW RVG SS1H6LW RVG SS1H10LWHRVG SS1H15LWHRVG
Description DIODE SCHOTTKY 40V 1A SOD123W DIODE SCHOTTKY 200V 1A SOD123W DIODE SCHOTTKY 150V 1A SOD123W DIODE SCHOTTKY 100V 1A SOD123W DIODE SCHOTTKY 60V 1A SOD123W Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon,
Diode type Schottky Schottky Schottky Schottky Schottky RECTIFIER DIODE RECTIFIER DIODE
Voltage - DC Reverse (Vr) (Maximum) 40V 200V 150V 100V 60V - -
Current - average rectification (Io) 1A 1A 1A 1A 1A - -
Voltage at different If - Forward (Vf 650mV @ 1A 850mV @ 1A 850mV @ 1A 800mV @ 1A 700mV @ 1A - -
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) - -
Current at different Vr - Reverse leakage current 500nA @ 40V 500nA @ 200V 500nA @ 150V 500nA @ 100V 500nA @ 60V - -
Installation type surface mount surface mount surface mount surface mount surface mount - -
Package/casing SOD-123W SOD-123W SOD-123W SOD-123W SOD-123W - -
Supplier device packaging SOD123W SOD123W SOD123W SOD123W SOD123W - -
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C - -

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