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BUK7Y12-100EX

Description
MOSFET N-CH 100V 85A LFPAK
CategoryDiscrete semiconductor    The transistor   
File Size725KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK7Y12-100EX Overview

MOSFET N-CH 100V 85A LFPAK

BUK7Y12-100EX Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionSOP-8, 4 PIN
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codenot_compliant
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)139 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)85 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)339 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7Y12-100E
8 May 2013
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
21
-
nC
Min
-
-
-
Typ
-
-
-
Max
100
85
238
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
8.1
12
Dynamic characteristics
Q
GD
gate-drain charge
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