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FCD5N60 / FCU5N60 — N-Channel SuperFET
®
MOSFET
August 2014
FCD5N60 / FCU5N60
N-Channel SuperFET
®
MOSFET
600 V, 4.6 A, 950 mΩ
Features
• 650 V @ T
J
= 150°C
• Typ. R
DS(on)
= 810 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 16 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 32 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET
®
MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
Application
• LCD/LED TV and Monitor
• Lighting
• Solar Inverter
• AC-DC Power Supply
D
D
G
S
D-PAK
I-PAK
G
D
S
G
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Drain Current
Drain Current
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCD5N60TM
FCD5N60TM_WS
FCU5N60TU
600
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
C
o
C
o
C
Parameter
- Continuous (T
C
=
- Pulsed
25
o
C)
(Note 1)
4.6
2.9
13.8
±30
159
4.6
5.4
4.5
54
0.43
-55 to +150
300
- Continuous (T
C
= 100
o
C)
- Derate Above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
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Microcontroller MCU
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