Transistors with built-in Resistor
UNRL110/111/113/114/115
Silicon PNP epitaxial planer type
Unit: mm
For digital circuit
0.020
±0.010
3
2
0.80
±0.05
I
Features
•
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
•
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
4
1
1.00
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
Resistance by Part Number
•
UNRL110
•
UNRL111
•
UNRL113
•
UNRL114
•
UNRL115
Marking Symbol
P
A
B
R
M
(R
1
)
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
(R
2
)
10 kΩ
47 kΩ
47 kΩ
0.60
±0.05
4
0.20
±0.03
1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
*
Junction temperature
Storage temperature
an
Parameter
ce
I
Electrical Characteristics
T
a
=
25°C
±
3°C
/D
isc
on
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm
2
or more, thickness: 1.6 mm
tin
Symbol
I
CBO
I
CEO
I
EBO
ue
T
stg
−55
to
+125
Ma
int
en
Collector cutoff current
Emitter cutoff
current
UNRL111
UNRL114
UNRL113
UNRL110/115
Collector to base voltage
Collector to emitter voltage
Forward current
transfer ratio
UNRL111
UNRL113/114
UNRL110/115
Collector to emitter saturation voltage
V
CBO
V
CEO
h
FE
V
CE(sat)
d
pla inc
Pl
ea
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mi UR ue ued pe pe Pro
co L a d t ty
du
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ct
e
life
an ut
d
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cy
on es
cle
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sta
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ge
.jp rm
.
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/ ion
.
3
0.30
±0.03
0.60
2
0.05
±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Rating
−50
−50
150
125
Unit
V
V
Internal Connection
3
2
−100
mA
°C
°C
R
2
mW
4
R
1
1
Conditions
Min
Typ
Max
Unit
µA
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−
0.1
−
0.5
−
0.5
−
0.2
−
0.1
−
0.01
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CE
= −10
V, I
C
= −5
mA
−50
−50
35
80
160
I
C
= −10
mA, I
B
= −
0.3 mA
460
−
0.25
V
V
V
0.50
mA
0.05
±0.03
Publication date: July 2001
SJH00044AED
1
UNRL110/111/113/114/115
I
Electrical Characteristics(continued)
T
a
=
25°C
±
3°C
Parameter
High-level output voltage
Low-level output voltage
UNRL113
Transition frequency
Input resistance
UNRL111/114/115
UNRL110/113
UNRL111/113
UNRL114
f
T
R
1
R
1
/R
2
Symbol
V
OH
V
OL
Conditions
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
−30%
0.8
80
10
47
1.0
0.21
1.2
0.25
+30%
MHz
kΩ
Min
−4.9
−
0.2
Typ
Max
Unit
V
V
Common characteristics chart
P
T
T
a
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140
Characteristics charts of UNRL110
an
−120
ce
I
C
V
CE
/D
isc
on
Ambient temperature T
a
(
°C
)
Collector current I
C
(mA)
−10
−3
−1
Forward current transfer ratio h
FE
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
Collector to emitter saturation voltage V
CE(sat)
(V)
Ma
int
en
T
a
=
25°C
−100
−60
−
0.2 mA
−
0.1 mA
−20
−40
−0.3
−0.1
−25°C
−0.03
0
0
−2
−4
−6
−8
−10
−12
−0.01
−0.1 −0.3
Collector to emitter voltage V
CE
(V)
2
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
V
CE(sat)
I
C
h
FE
I
C
I
C
/ I
B
=
10
M
ain
Di
sc te
on na
tin nc
ue e/
d
Resistance ratio
0.17
Total power dissipation P
T
(mW)
tin
ue
400
V
CE
=
–10 V
−30
300
T
a
=
75°C
200
25°C
T
a
=
75°C
25°C
−25°C
100
−1
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00044AED
UNRL110/111/113/114/115
C
ob
V
CB
6
I
O
V
IN
−10
000
−3
000
V
O
= −5
V
T
a
=
25°C
V
IN
I
O
−100
−30
V
O
= −
0.2 V
T
a
= 25°C
Collector output capacitance C
ob
(pF)
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−1
000
−300
−100
−30
−10
−3
−10
−3
−1
−0.3
−0.1
3
0
−0.1 −0.3
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
Characteristics charts of UNRL111
I
C
V
CE
−160
−140
−120
−100
−80
−60
−40
−20
−100
−30
−10
−3
−1
I
B
= −1.0
mA
T
a
=
25°C
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−0.3
−0.1
−
0.2 mA
ue
−
0.1 mA
−10
−0.03
tin
0
0
−2
−4
−6
−8
−12
−0.01
−0.1 −0.3
Collector to emitter voltage V
CE
(V)
ce
C
ob
V
CB
an
6
Ma
int
en
Collector output capacitance C
ob
(pF)
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
–10 000
−3
000
Output current I
O
(
µA
)
4
−300
−100
−30
−10
−3
Input voltage V
IN
(V)
−1
000
3
2
1
0
−0.1 −0.3
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
1
−0.03
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
10
160
V
CE
= −10
V
T
a
=
75°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
25°C
120
−25°C
80
25°C
T
a
=
75°C
40
−25°C
−1
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
on
Collector current I
C
(mA)
Collector current I
C
(mA)
/D
isc
I
O
V
IN
V
IN
I
O
V
O
= −5
V
T
a
=
25°C
−100
−30
−10
−3
−1
V
O
= −
0.2 V
T
a
=
25°C
−0.3
−0.1
−0.03
−0.6
−0.8
−1.0
−1.2
−1.4
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
−1
−0.4
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00044AED
3
UNRL110/111/113/114/115
Characteristics charts of UNRL113
I
C
V
CE
−160
I
B
= −1.0
mA
−140
T
a
=
25°C
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−100
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Forward current transfer ratio h
FE
−30
−10
−3
−1
Collector current I
C
(mA)
−120
−100
−80
−60
−40
−20
300
T
a
=
75°C
25°C
200
M
ain
Di
sc te
on na
tin nc
ue e/
d
−
0.3 mA
−0.3
−0.1
25°C
T
a
=
75°C
−
0.2 mA
−25°C
100
0
0
−2
−4
−6
−8
−10
−12
−0.01
−0.1 −0.3
Collector to emitter voltage V
CE
(V)
C
ob
V
CB
6
Collector output capacitance C
ob
(pF)
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
000
−3
000
−1
000
−300
−100
−30
−10
−3
4
3
2
1
−1
−3
−10
−30
−100
ue
0
−0.1 −0.3
Ma
int
en
an
I
C
V
CE
−160
−140
ce
Characteristics charts of UNRL114
/D
isc
on
Collector to base voltage V
CB
(V)
−100
T
a
=
25°C
Collector to emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
−120
−100
−80
−60
−40
−20
0
−2
−4
−6
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−10
−3
−1
Forward current transfer ratio h
FE
I
B
= −1.0
mA
−0.03
0
−8
−10
−12
−25°C
−0.01
−0.1 −0.3
−1
Collector to emitter voltage V
CE
(V)
4
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
−1
−3
−10
−30
−100
−
0.1 mA
−0.03
−25°C
0
−1
−3
−10
−30
−100 −300 −1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
V
O
= −5
V
T
a
=
25°C
−100
−30
−10
−3
−1
V
O
= −0.2
V
T
a
=
25°C
Output current I
O
(
µA
)
Input voltage V
IN
(V)
−0.3
−0.1
−0.03
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
tin
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
I
C
/ I
B
=
10
400
V
CE
= −10
V
−30
300
T
a
=
75°C
200
25°C
−25°C
100
−0.3
−0.1
25°C
T
a
=
75°C
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00044AED
UNRL110/111/113/114/115
C
ob
V
CB
6
I
O
V
IN
–10 000
−3
000
V
O
= −5
V
T
a
=
25°C
−1
000
−300
V
IN
I
O
V
O
= −0.2
V
T
a
=
25°C
Collector output capacitance C
ob
(pF)
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Output current I
O
(
µA
)
4
−300
−100
–30
−10
−3
Input voltage V
IN
(V)
−1
000
−100
−30
−10
−3
−1
3
0
−0.1 −0.3
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
Characteristics charts of UNRL115
I
C
V
CE
−160
−140
−120
−100
−80
−60
−40
−20
−100
−30
−10
−3
−1
I
B
=
−1.0
mA
T
a
=
25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−0.3
−0.1
−0.03
0
−2
−4
−6
−8
−10
−12
tin
0
−25°C
−0.01
−0.1 −0.3
−1
Collector to emitter voltage V
CE
(V)
ce
C
ob
V
CB
6
an
Ma
int
en
Collector output capacitance C
ob
(pF)
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
000
−3
000
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−1
000
−300
−100
−30
−10
−3
3
2
1
0
−0.1 −0.3
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−0.1
−0.1 −0.3
−1
−3
−10
−30
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
1
−0.3
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
= 10
400
V
CE
= −10
V
300
T
a
=
75°C
200
25°C
T
a
=
75°C
−25°C
25°C
100
ue
−3
−10
−30
−100
0
−1
−3
−10
−30
−100 −300 −1
000
on
Collector current I
C
(mA)
Collector current I
C
(mA)
/D
isc
I
O
V
IN
V
IN
I
O
V
O
= −5
V
T
a
=
25˚C
−100
−30
−10
−3
−1
V
O
= −0.2
V
T
a
=
25°C
−0.3
−0.1
−0.03
−0.6
−0.8
−1.0
−1.2
−1.4
−1
−0.4
−0.01
−0.1 −0.3
−1
−3
−10
−30
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00044AED
5
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