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UNRL11300A

Description
TRANS PREBIAS PNP 150MW ML4-N1
Categorysemiconductor    Discrete semiconductor   
File Size237KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UNRL11300A Overview

TRANS PREBIAS PNP 150MW ML4-N1

UNRL11300A Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)80 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition80MHz
Power - Max150mW
Installation typesurface mount
Package/casingSC-103
Supplier device packagingML4-N1
Transistors with built-in Resistor
UNRL110/111/113/114/115
Silicon PNP epitaxial planer type
Unit: mm
For digital circuit
0.020
±0.010
3
2
0.80
±0.05
I
Features
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
4
1
1.00
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
Resistance by Part Number
UNRL110
UNRL111
UNRL113
UNRL114
UNRL115
Marking Symbol
P
A
B
R
M
(R
1
)
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
(R
2
)
10 kΩ
47 kΩ
47 kΩ
0.60
±0.05
4
0.20
±0.03
1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
*
Junction temperature
Storage temperature
an
Parameter
ce
I
Electrical Characteristics
T
a
=
25°C
±
3°C
/D
isc
on
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm
2
or more, thickness: 1.6 mm
tin
Symbol
I
CBO
I
CEO
I
EBO
ue
T
stg
−55
to
+125
Ma
int
en
Collector cutoff current
Emitter cutoff
current
UNRL111
UNRL114
UNRL113
UNRL110/115
Collector to base voltage
Collector to emitter voltage
Forward current
transfer ratio
UNRL111
UNRL113/114
UNRL110/115
Collector to emitter saturation voltage
V
CBO
V
CEO
h
FE
V
CE(sat)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
3
0.30
±0.03
0.60
2
0.05
±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Rating
−50
−50
150
125
Unit
V
V
Internal Connection
3
2
−100
mA
°C
°C
R
2
mW
4
R
1
1
Conditions
Min
Typ
Max
Unit
µA
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
0.1
0.5
0.5
0.2
0.1
0.01
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CE
= −10
V, I
C
= −5
mA
−50
−50
35
80
160
I
C
= −10
mA, I
B
= −
0.3 mA
460
0.25
V
V
V
0.50
mA
0.05
±0.03
Publication date: July 2001
SJH00044AED
1

UNRL11300A Related Products

UNRL11300A UNRL11100A UNRL11500A
Description TRANS PREBIAS PNP 150MW ML4-N1 TRANS PREBIAS PNP 150MW ML4-N1 TRANS PREBIAS PNP 150MW ML4-N1
Transistor type PNP - Pre-biased PNP - Pre-biased PNP - Pre-biased
Current - Collector (Ic) (Maximum) 100mA 100mA 100mA
Voltage - collector-emitter breakdown (maximum) 50V 50V 50V
Resistor - Substrate (R1) 47 kOhms 10 kOhms 10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value) 80 @ 5mA,10V 35 @ 5mA,10V 160 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic 250mV @ 300µA,10mA 250mV @ 300µA,10mA 250mV @ 300µA,10mA
Current - collector cutoff (maximum) 500nA 500nA 500nA
Frequency - Transition 80MHz 80MHz 80MHz
Power - Max 150mW 150mW 150mW
Installation type surface mount surface mount surface mount
Package/casing SC-103 SC-103 SC-103
Supplier device packaging ML4-N1 ML4-N1 ML4-N1
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms -
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