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UNRL21100A

Description
TRANS PREBIAS NPN 150MW ML4-N1
Categorysemiconductor    Discrete semiconductor   
File Size249KB,7 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UNRL21100A Overview

TRANS PREBIAS NPN 150MW ML4-N1

UNRL21100A Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)35 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition150MHz
Power - Max150mW
Installation typesurface mount
Package/casingSC-103
Supplier device packagingML4-N1
Transistors with built-in Resistor
UNRL210/211/213/214/215/216
Silicon NPN epitaxial planer type
Unit: mm
For digital circuit
0.020
±0.010
3
2
0.80
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
4
1
1.00
±0.05
I
Features
0.60
±0.05
4
0.20
±0.03
1
I
Resistance by Part Number
UNRL210
UNRL211
UNRL213
UNRL214
UNRL215
UNRL216
Marking Symbol
P
A
B
R
M
N
(R
1
)
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
*
Junction temperature
Storage temperature
Ma
int
en
Parameter
an
I
Electrical Characteristics
T
a
=
25°C
±
3°C
ce
/D
isc
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm
2
or more, thickness: 1.6 mm
on
tin
T
stg
−55
to
+125
Symbol
I
CBO
I
CEO
I
EBO
Collector cutoff current
Emitter cutoff
current
UNRL211
UNRL214
UNRL213
UNRL210/215/216
Collector to base voltage
Collector to emitter voltage
Forward current
transfer ratio
UNRL211
UNRL213/214
UNRL210/215/216
Collector to emitter saturation voltage
Publication date: July 2001
V
CBO
V
CEO
h
FE
V
CE(sat)
d
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du
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ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
(R
2
)
10 kΩ
47 kΩ
47 kΩ
3
0.30
±0.03
0.60
2
0.05
±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Internal Connection
3
Rating
50
50
Unit
V
V
2
R
2
100
150
125
mA
°C
°C
4
R
1
1
mW
ue
Conditions
Min
Typ
Max
0.1
0.5
0.5
Unit
µA
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.2
0.1
0.01
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
50
35
80
160
I
C
=
10 mA, I
B
=
0.3 mA
SJH00045AED
460
0.25
V
0.50
mA
0.05
±0.03
V
V
1

UNRL21100A Related Products

UNRL21100A UNRL21500A UNRL21300A
Description TRANS PREBIAS NPN 150MW ML4-N1 TRANS PREBIAS NPN 150MW ML4-N1 TRANS PREBIAS NPN 150MW ML4-N1
Transistor type NPN - Pre-biased NPN - Pre-biased NPN - Pre-biased
Current - Collector (Ic) (Maximum) 100mA 100mA 100mA
Voltage - collector-emitter breakdown (maximum) 50V 50V 50V
Resistor - Substrate (R1) 10 kOhms 10 kOhms 47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value) 35 @ 5mA,10V 160 @ 5mA,10V 80 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic 250mV @ 300µA,10mA 250mV @ 300µA,10mA 250mV @ 300µA,10mA
Current - collector cutoff (maximum) 500nA 500nA 500nA
Frequency - Transition 150MHz 150MHz 150MHz
Power - Max 150mW 150mW 150mW
Installation type surface mount surface mount surface mount
Package/casing SC-103 SC-103 SC-103
Supplier device packaging ML4-N1 ML4-N1 ML4-N1
Resistor - Emitter Base (R2) 10 kOhms - 47 kOhms
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