Transistors with built-in Resistor
UNRL210/211/213/214/215/216
Silicon NPN epitaxial planer type
Unit: mm
For digital circuit
0.020
±0.010
3
2
0.80
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
•
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
4
1
1.00
±0.05
I
Features
0.60
±0.05
4
0.20
±0.03
1
I
Resistance by Part Number
•
UNRL210
•
UNRL211
•
UNRL213
•
UNRL214
•
UNRL215
•
UNRL216
Marking Symbol
P
A
B
R
M
N
(R
1
)
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
*
Junction temperature
Storage temperature
Ma
int
en
Parameter
an
I
Electrical Characteristics
T
a
=
25°C
±
3°C
ce
/D
isc
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm
2
or more, thickness: 1.6 mm
on
tin
T
stg
−55
to
+125
Symbol
I
CBO
I
CEO
I
EBO
Collector cutoff current
Emitter cutoff
current
UNRL211
UNRL214
UNRL213
UNRL210/215/216
Collector to base voltage
Collector to emitter voltage
Forward current
transfer ratio
UNRL211
UNRL213/214
UNRL210/215/216
Collector to emitter saturation voltage
Publication date: July 2001
V
CBO
V
CEO
h
FE
V
CE(sat)
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ct
e
life
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cy
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ge
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.
/en at
/ ion
.
(R
2
)
10 kΩ
47 kΩ
47 kΩ
3
0.30
±0.03
0.60
2
0.05
±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Internal Connection
3
Rating
50
50
Unit
V
V
2
R
2
100
150
125
mA
°C
°C
4
R
1
1
mW
ue
Conditions
Min
Typ
Max
0.1
0.5
0.5
Unit
µA
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.2
0.1
0.01
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
50
35
80
160
I
C
=
10 mA, I
B
=
0.3 mA
SJH00045AED
460
0.25
V
0.50
mA
0.05
±0.03
V
V
1
UNRL210/211/213/214/215/216
I
Electrical Characteristics(continued)
T
a
=
25°C
±
3°C
Parameter
High-level output voltage
Low-level output voltage
UNRL213
Transition frequency
Input resistance
UNRL216
UNRL211/214/215
UNRL210/213
UNRL211/213
UNRL214
f
T
R
1
Symbol
V
OH
V
OL
Conditions
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
150
4.7
10
47
1.0
0.21
1.2
0.25
+30%
MHz
kΩ
Min
4.9
0.2
Typ
Max
Unit
V
V
Common characteristics chart
P
T
T
a
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140
Characteristics charts of UNRL210
60
an
ce
I
C
V
CE
/D
isc
on
tin
ue
Ambient temperature T
a
(
°C
)
Collector to emitter saturation voltage V
CE(sat)
(V)
Ma
int
en
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
10
3
1
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
40
30
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
20
10
0
0
2
4
6
8
10
12
Collector to emitter voltage V
CE
(V)
2
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
V
CE(sat)
I
C
h
FE
I
C
100
30
I
C
/ I
B
=
10
400
350
300
250
200
150
100
50
0
V
CE
=
10 V
T
a
=
75°C
25°C
M
ain
Di
sc te
on na
tin nc
ue e/
d
Resistance ratio
R
1
/R
2
0.8
0.17
Total power dissipation P
T
(mW)
T
a
=
75°C
0.3
25°C
0.1
0.03
0.01
0.1
−25°C
0.3
1
3
10
30
100
1
3
−25°C
10
30
100
300
1 000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00045AED
UNRL210/211/213/214/215/216
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
V
IN
I
O
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
0.3
0.1
V
O
=
0.2 V
T
a
=
25°C
10 000
3 000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
3
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Characteristics charts of UNRL211
I
C
V
CE
160
140
120
100
80
60
40
20
0
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
Forward current transfer ratio h
FE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
0.4 mA
0.3 mA
0.2 mA
ue
0.1 mA
0
2
4
6
8
10
12
Collector to emitter voltage V
CE
(V)
ce
C
ob
V
CB
6
an
Collector output capacitance C
ob
(pF)
Ma
int
en
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10 000
3 000
Output current I
O
(
µA
)
1 000
300
100
30
10
3
4
Input voltage V
IN
(V)
3
2
1
0.03
0.01
0.1
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
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d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
0.3
1
3
10
30
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
1
0.03
Input voltage V
IN
(V)
1 000
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
100
30
10
3
1
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
10
400
V
CE
=
10 V
300
T
a
=
75°C
200
0.3
0.1
25°C
T
a
=
75°C
25°C
100
−25°C
−25˚C
0.03
tin
0.01
0.1
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1 000
on
Collector current I
C
(mA)
Collector current I
C
(mA)
/D
isc
I
O
V
IN
V
IN
I
O
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
V
O
=
0.2 V
T
a
=
25°C
0.3
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00045AED
3
UNRL210/211/213/214/215/216
Characteristics charts of UNRL213
I
C
V
CE
160
V
CE(sat)
I
C
100
h
FE
I
C
400
V
CE
=
10 V
350
T
a
=
25°C
140
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
60
40
20
0
0.3 mA
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
10
30
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
100
10
3
1
300
250
200
150
100
50
0
T
a
=
75°C
25°C
−25°C
0.1 mA
0
2
4
6
8
10
12
Collector to emitter voltage V
CE
(V)
C
ob
V
CB
6
Collector output capacitance C
ob
(pF)
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
3 000
Output current I
O
(
µA
)
1 000
300
100
30
10
3
4
3
2
1
ue
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Ma
int
en
an
I
C
V
CE
160
140
ce
Characteristics charts of UNRL214
Collector to emitter saturation voltage V
CE(sat)
(V)
T
a
=
25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
120
100
80
60
40
20
0
10
3
1
Forward current transfer ratio h
FE
I
B
=
1.0 mA
Collector current I
C
(mA)
0.2 mA
0.1 mA
0
2
4
6
8
10
12
Collector to emitter voltage V
CE
(V)
4
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0.01
0.1
0.3
1
3
10
30
100
1
3
10
30
100
300
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.3
0.1
0.2 mA
25°C
T
a
=
75°C
0.03
−25°C
1 000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
10 000
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
V
O
=
0.2 V
T
a
=
25°C
Input voltage V
IN
(V)
0.3
0.1
0.03
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
0.3
1
3
10
30
100
tin
Input voltage V
IN
(V)
Output current I
O
(mA)
/D
isc
on
V
CE(sat)
I
C
h
FE
I
C
100
30
I
C
/ I
B
=
10
400
350
300
250
200
V
CE
=
10 V
T
a
=
75°C
25°C
0.3
0.1
0.03
0.01
0.1
−25°C
0.3
1
3
10
25°C
T
a
=
75°C
150
−25°C
100
50
0
30
100
1
3
10
30
100
300
1 000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00045AED
UNRL210/211/213/214/215/216
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10 000
3 000
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
100
30
10
3
1
0.3
0.1
V
O
=
0.2 V
T
a
=
25°C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
3
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Characteristics charts of UNRL215
I
C
V
CE
160
140
120
100
80
60
40
20
0
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
3
1
Forward current transfer ratio h
FE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
0.3 mA
0.2 mA
0.1 mA
0
2
4
6
8
10
12
Collector to emitter voltage V
CE
(V)
an
ce
C
ob
V
CB
6
Collector output capacitance C
ob
(pF)
Ma
int
en
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10 000
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
3
2
1
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
1
0.4
0.6
0.8
1.0
1.2
1.4
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
1
Input voltage V
IN
(V)
1 000
0.03
0.01
0.1
0.3
1
3
10
30
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
100
30
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
10
400
350
300
250
200
150
100
50
0
V
CE
=
10 V
Collector current I
C
(mA)
T
a
=
75°C
25°C
0.3
0.1
T
a
= 75°C
−25°C
25°C
0.03
−25°C
tin
ue
0.01
0.1
0.3
1
3
10
30
100
1
3
10
30
100
300
1 000
on
Collector current I
C
(mA)
Collector current I
C
(mA)
/D
isc
I
O
V
IN
V
IN
I
O
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
V
O
=
0.2 V
T
a
=
25°C
3 000
1 000
300
100
30
10
3
0.3
0.1
0.03
0.01
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00045AED
5
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