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ZXMD65N03N8TA

Description
MOSFET 2N-CH 30V 6.5A 8-SOIC
Categorysemiconductor    Discrete semiconductor   
File Size71KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

ZXMD65N03N8TA Overview

MOSFET 2N-CH 30V 6.5A 8-SOIC

ZXMD65N03N8TA Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionstandard
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C6.5A
Rds On (maximum value) when different Id, Vgs-
Vgs (th) (maximum value) when different Id-
Gate charge (Qg) at different Vgs (maximum value)-
Input capacitance (Ciss) at different Vds (maximum value)-
Power - Max-
Operating temperature-
Installation typesurface mount
Package/casing8-SOIC (0.154", 3.90mm wide)
Supplier device packaging8-SO
ZXMD65N03N8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
=30V; R
DS(ON)
=0.029
D
=6.5A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
SO8
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMD65N03N8TA
REEL SIZE
(inches)
13
TAPE WIDTH (mm)
12mm embossed
QUANTITY
PER REEL
1000 units
DEVICE MARKING
ZXMD
65N03
Top View
DRAFT ISSUE A - AUGUST 2000
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