AT49F001NT-12PI datasheet, PDF

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AT49F001NT-12PI: DescriptionIC FLASH 1M PARALLEL 32DIP; Categorystorage; File Size157KB，22 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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AT49F001NT-12PI Overview

IC FLASH 1M PARALLEL 32DIP

AT49F001NT-12PI Parametric

Parameter Name	Attribute value
memory type	non-volatile
memory format	flash memory
technology	FLASH
storage	1Mb （128K x 8）
Write cycle time - words, pages	50µs
interview time	120ns
memory interface	in parallel
Voltage - Power	4.5 V ~ 5.5 V
Operating temperature	-40°C ~ 85°C（TC）
Installation type	Through hole
Package/casing	32-DIP（0.600"，15.24mm）
Supplier device packaging	32-DIP

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Features

•

Single Voltage Operation

•

– 5V Read

– 5V Reprogramming

Fast Read Access Time – 55 ns

Internal Program Control and Timer

Sector Architecture

– One 16K Bytes Boot Block with Programming Lockout

– Two 8K Bytes Parameter Blocks

– Two Main Memory Blocks (32K, 64K Bytes)

Fast Erase Cycle Time – 10 Seconds

Byte-by-byte Programming – 10 µs/Byte Typical

Hardware Data Protection

DATA Polling for End of Program Detection

Low Power Dissipation

– 50 mA Active Current

– 100 µA CMOS Standby Current

Typical 10,000 Write Cycles

•

1-megabit

(128K x 8)

5-volt Only

Flash Memory

AT49F001

AT49F001N

AT49F001T

AT49F001NT

Description

The AT49F001(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its

1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to

Pin Configurations

Pin Name

A0 - A16

RESET

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

RESET

Data Inputs/Outputs

No Connect

Don’t Connect

DIP Top View

* RESET

A16

A15

A12

I/O0

I/O1

I/O2

GND

VCC

A14

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

PLCC Top View

A12

A15

A16

RESET *

VCC

VSOP Top View (8 x 14 mm) or

TSOP Top View (8 x 20 mm)

Type 1

A11

A13

A14

VCC

* RESET

A16

A15

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

I/O0

A14

A13

A11

A10

I/O7

Rev. 1008D–FLASH–2/03

Note:

*This pin is a DC on the AT49F001N(T).

AT49F001(N(T)

Device

Operation

READ:

The AT49F001(N)(T) is accessed like an EPROM. When CE and OE are low and WE

is high, the data stored at the memory location determined by the address pins is asserted on

the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This

dual-line control gives designers flexibility in preventing bus contention.

COMMAND SEQUENCES:

When the device is first powered on, it will be reset to the read or

standby mode depending upon the state of the control line inputs. In order to perform other

device functions, a series of command sequences are entered into the device. The command

sequences are shown in the Command Definitions table. The command sequences are written

by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high.

The address is latched on the falling edge of CE or WE, whichever occurs last. The data is

latched by the first rising edge of CE or WE. Standard microprocessor write timings are used.

The address locations used in the command sequences are not affected by entering the com-

mand sequences.

RESET:

A RESET input pin is provided to ease some system applications. When RESET is at

a logic high level, the device is in its standard operating mode. A low level on the RESET input

halts the present device operation and puts the outputs of the device in a high inpendance

state. If the RESET pin makes a high-to-low transition during a program or erase operation,

the operation may not be successfully completed and the operation will have to be repeated

after a high level is applied to the RESET pin. When a high level is reasserted on the RESET

pin, the device returns to the read or standby mode, depending upon the state of the control

inputs. By applying a 12V ± 0.5V input signal to the RESET pin, the boot block array can be

reprogrammed even if the boot block lockout feature has been enabled (see Boot Block Pro-

gramming Lockout Override section). The RESET feature is not available for the

AT49F001N(T).

ERASURE:

Before a byte can be reprogrammed, the main memory block or parameter block

which contains the byte must be erased. The erased state of the memory bits is a logical “1”.

The entire device can be erased at one time by using a 6-byte software code. The software

chip erase code consists of 6-byte load commands to specific address locations with a specific

data pattern (please refer to the Chip Erase Cycle Waveforms).

After the software chip erase has been initiated, the device will internally time the erase opera-

tion so that no external clocks are required. The maximum time needed to erase the whole

chip is t

. If the boot block lockout feature has been enabled, the data in the boot sector will

not be erased.

CHIP ERASE:

If the boot block lockout has been enabled, the Chip Erase function will erase

Parameter Block 1, Parameter Block 2, Main Memory Block 1, and Main Memory Block 2 but

not the boot block. If the Boot Block Lockout has not been enabled, the Chip Erase function

will erase the entire chip. After the full chip erase the device will return back to read mode. Any

command during chip erase will be ignored.

1008D–FLASH–2/03

SECTOR ERASE:

As an alternative to a full chip erase, the device is organized into sectors

that can be individually erased. There are two 8-Kbyte parameter block sections and two main

memory blocks. The 8-Kbyte parameter block sections can be independently erased and

reprogrammed. The two main memory sections are designed to be used as alternative mem-

ory sectors. That is, whenever one of the blocks has been erased and reprogrammed, the

other block should be erased and reprogrammed before the first block is again erased. The

Sector Erase command is a six bus cycle operation. The sector address is latched on the fall-

ing WE edge of the sixth cycle while the 30H data input command is latched at the rising edge

of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase opera-

tion is internally controlled; it will automatically time to completion.

BYTE PROGRAMMING:

Once the memory array is erased, the device is programmed (to a

logical “0”) on a byte-by-byte basis. Please note that a data “0” cannot be programmed back to

a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the

internal device command register and is a 4 bus cycle operation (please refer to the Command

Definitions table). The device will automatically generate the required internal program pulses.

The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs

last, and the data latched on the rising edge of WE or CE, whichever occurs first. Program-

ming is completed after the specified t

cycle time. The DATA polling feature may also be

used to indicate the end of a program cycle.

BOOT BLOCK PROGRAMMING LOCKOUT:

The device has one designated block that has

a programming lockout feature. This feature prevents programming of data in the designated

block once the feature has been enabled. The size of the block is 16K bytes. This block,

referred to as the boot block, can contain secure code that is used to bring up the system.

Enabling the lockout feature will allow the boot code to stay in the device while data in the rest

of the device is updated. This feature does not have to be activated; the boot block’s usage as

a write protected region is optional to the user. The address range of the boot block is 00000

to 03FFF for the AT49F001(N) while the address range of the boot block is 1C000 to 1FFFF

for the AT49F001(N)T.

Once the feature is enabled, the data in the boot block can no longer be erased or pro-

grammed with input voltage levels of 5.5V or less. Data in the main memory block can still be

changed through the regular programming method. To activate the lockout feature, a series of

six program commands to specific addresses with specific data must be performed. Please

refer to the Command Definitions table.

BOOT BLOCK LOCKOUT DETECTION:

A software method is available to determine if pro-

gramming of the boot block section is locked out. When the device is in the software product

identification mode (see Software Product Identification Entry and Exit sections) a read from

address location 00002H will show if programming the boot block is locked out for the

AT49F001(N) and a read from address 1C002H will show if programming the boot block is

locked out for the AT49F001(N)T. If the data on I/O0 is low, the boot block can be pro-

grammed; if the data on I/O0 is high, the program lockout feature has been activated and the

block cannot be programmed. The software product identification exit code should be used to

return to standard operation.

AT49F001(N(T)

1008D–FLASH–2/03

AT49F001(N(T)

BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:

The user can override the boot

block programming lockout by taking the RESET pin to 12 volts. By doing this, protected boot

block data can be altered through a chip erase, sector erase or word programming. When the

RESET pin is brought back to TTL levels the boot block programming lockout feature is again

active. This feature is not available on the AT49F001N(T).

PRODUCT IDENTIFICATION:

The product identification mode identifies the device and man-

ufacturer as Atmel. It may be accessed by hardware or software operation. The hardware

operation mode can be used by an external programmer to identify the correct programming

algorithm for the Atmel product.

For details, see Operating Modes (for hardware operation) or Software Product Identification.

The manufacturer and device code is the same for both modes.

DATA POLLING:

The AT49F001(N)(T) features DATA polling to indicate the end of a pro-

gram cycle. During a program cycle an attempted read of the last byte loaded will result in the

complement of the loaded data on I/O7. Once the program cycle has been completed, true

data is valid on all outputs and the next cycle may begin. DATA polling may begin at any time

during the program cycle.

TOGGLE BIT:

In addition to DATA polling the AT49F001(N)(T) provides another method for

determining the end of a program or erase cycle. During a program or erase operation, suc-

cessive attempts to read data from the device will result in I/O6 toggling between one and

zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be

read. Examining the toggle bit may begin at any time during a program cycle.

HARDWARE DATA PROTECTION:

Hardware features protect against inadvertent programs

to the AT49F001(N)(T) in the following ways: (a) V

sense: if V

is below 3.8V (typical), the

program function is inhibited. (b) Program inhibit: holding any one of OE low, CE high or WE

high inhibits program cycles. (c) Noise filter: pulses of less than 15 ns (typical) on the WE or

CE inputs will not initiate a program cycle.

1008D–FLASH–2/03

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