BSL308PE
OptiMOS™ P3 Small-Signal-Transistor
Features
• Dual P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according to AEC Q101
• 100% Lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-4.5 V
I
D
-30
80
130
-2.0
PG-TSOP-6
6
5
4
V
mW
A
1
2
3
Type
BSL308PE
Package
Tape and Reel Information
Marking
sPR
Lead Free
Yes
Packing
Non dry
PG-TSOP-6 H6327: 3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-2 A,
R
GS
=25
W
I
D
=-2 A,
V
DS
=-16V,
di /dt =-200A/µs,
T
j,max
=150 °C
Value
-2.0
-1.6
-8.0
-10.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
2)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
2 (2kV to 4kV)
260 °C
55/150/56
V
W
°C
°C
°C
Only one of both transistors in operation
Rev 2.03
page 1
2013-11-07
BSL308PE
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
2)
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
= 0V,
I
D
=-250µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=-11µA
V
DS
=-30V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30V,
V
GS
=0V,
T
j
=150 °C
-30
-2.0
-
-
-1.5
-
-
-1.0
-1
V
mA
-
-
-
-
-
-
88
62
-100
-5
130
80
mA
mW
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20V,
V
DS
=0V
V
GS
=-4.5 V,
I
D
=-1.7 A
V
GS
=-10 V,
I
D
=-2 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-1.6 A
4.6
-
S
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
2)
Rev 2.03
page 2
2013-11-07
BSL308PE
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=-2 A,
T
j
=25 °C
V
R
=-10 V,
I
F
=-2 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
-0.8
14
-5.9
-8.4
-1.1
-
-
V
ns
nC
-
-0.4
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-15 V,
I
D
=-2 A,
V
GS
=0 to -10 V
-
-
-
-
-1.2
-0.6
-5.0
-3.1
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10 V,
I
D
=-2 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=-15 V,
f
=1 MHz
-
-
-
-
-
-
-
376
196
12
5.6
7.7
15.3
2.8
500
261
18
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.03
page 3
2013-11-07
BSL308PE
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥-10 V
2.2
0.5
2
1.8
1.6
0.375
1.4
P
tot
[W]
0.25
I
D
[A]
0
40
80
120
160
1.2
1
0.8
0.6
0.125
0.4
0.2
0
0
0
20
40
60
80
100
120
140
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
10 µs
100 µs
1 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
10
0
1 ms
0.5
10
2
10 ms
0.2
0.1
Z
thJA
[K/W]
10
-1
I
D
[A]
0.05
10
1
0.02
0.01
10
-2
DC
single pulse
10
0
10
-3
10
-4
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev 2.03
page 4
2013-11-07
BSL308PE
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
6
4.5 V
10 V
4V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
400
2.8 V
350
3V
5
3.5 V
300
4
250
3.3 V
3.3 V
R
DS(on)
[mW]
I
D
[A]
3
200
3.5 V
150
4V
4.5 V
10 V
2
3V
100
1
2.8 V
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
4
10
8
3
6
2
g
fs
[S]
4
150 °C
25 °C
I
D
[A]
1
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
1
2
3
4
5
6
V
GS
[V]
I
D
[A]
Rev 2.03
page 5
2013-11-07
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