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BSL308PEH6327XTSA1

Description
MOSFET SMALL SIGNAL+P-CH
CategoryDiscrete semiconductor    The transistor   
File Size340KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSL308PEH6327XTSA1 Overview

MOSFET SMALL SIGNAL+P-CH

BSL308PEH6327XTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
Factory Lead Time10 weeks
Samacsys DescriptionBSL308PEH6327XTSA1 Dual P-Channel MOSFET, 2 A, 30 V OptiMOS P, 6-Pin TSOP Infineon
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)18 pF
JESD-30 codeR-PDSO-G6
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSL308PE
OptiMOS™ P3 Small-Signal-Transistor
Features
• Dual P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according to AEC Q101
• 100% Lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-4.5 V
I
D
-30
80
130
-2.0
PG-TSOP-6
6
5
4
V
mW
A
1
2
3
Type
BSL308PE
Package
Tape and Reel Information
Marking
sPR
Lead Free
Yes
Packing
Non dry
PG-TSOP-6 H6327: 3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-2 A,
R
GS
=25
W
I
D
=-2 A,
V
DS
=-16V,
di /dt =-200A/µs,
T
j,max
=150 °C
Value
-2.0
-1.6
-8.0
-10.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
2)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
2 (2kV to 4kV)
260 °C
55/150/56
V
W
°C
°C
°C
Only one of both transistors in operation
Rev 2.03
page 1
2013-11-07

BSL308PEH6327XTSA1 Related Products

BSL308PEH6327XTSA1 BSL308PEH6327 BSL308PEL6327HTSA1
Description MOSFET SMALL SIGNAL+P-CH Small Signal Field-Effect Transistor MOSFET 2P-CH 30V 2A 6TSOP
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
Reach Compliance Code compliant compliant unknown
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
Is it lead-free? Lead free - Lead free
package instruction SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6
Factory Lead Time 10 weeks - 1 week
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V
Maximum drain current (ID) 2 A - 2.1 A
Maximum drain-source on-resistance 0.08 Ω - 0.08 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 18 pF - 7.8 pF
JESD-30 code R-PDSO-G6 - R-PDSO-G6
Number of components 2 - 2
Number of terminals 6 - 6
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type P-CHANNEL - P-CHANNEL
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Transistor component materials SILICON - SILICON
ECCN code - EAR99 EAR99
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