Green
DMT6005LPS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BV
DSS
60V
R
DS(ON)
Max
4.5mΩ @ V
GS
= 10V
6.5mΩ @ V
GS
= 4.5V
I
D
T
C
= +25°C
(Note 9)
100A
100A
Features
100% Unclamped Inductive Switching – ensures more reliable and
robust end application
Low R
DS(ON)
– Minimizes Power Losses
Low Q
G
– Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
High Frequency Switching
Sync. Rectification
DC-DC Converters
Mechanical Data
Case: PowerDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
®
PowerDI5060-8
S
D
D
D
D
Pin1
S
S
G
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMT6005LPS-13
Notes:
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
T6005LS
YY WW
= Manufacturer’s Marking
T6005LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
DMT6005LPS
Document number: DS38867 Rev. 3 - 2
1 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMT6005LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH
Avalanche Energy, L=1mH
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
(Note 9)
T
C
= +100°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
60
±20
17.9
14.3
100
90
100
160
14.8
98
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
C
= +25°C
Symbol
P
D
R
θJA
P
D
R
θJC
T
J,
T
STG
Value
2.6
47
125
1
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.5
5
0.9
2,962
965.2
59.8
0.66
47.1
23.1
10.2
12.5
8.3
9.4
22
8.9
40.4
49.7
Max
—
1
±100
3
4.5
6.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
= 12.5A
V
GS
= 0V, I
S
= 50A
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 30V, I
D
= 50A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
pF
Ω
nC
ns
V
DD
= 30V, V
GS
= 10V,
I
D
= 30A, R
G
= 3.3Ω
ns
nC
I
F
= 30A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMT6005LPS
Document number: DS38867 Rev. 3 - 2
2 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMT6005LPS
50
V
GS
= 10V
100
V
GS
= 6V
V
GS
= 4.5V
45
40
90
80
V
DS
= 2.0V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
35
30
25
20
15
V
GS
= 4V
V
GS
= 3.5V
70
60
50
40
30
20
T
J
= 150°C
T
J
= 25°C
T
J
= 125°C
T
J
= 85°C
T
J
= -55°C
V
GS
= 3V
V
GS
= 2.8V
10
5
0
0
V
GS
= 2.6V
10
3
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= 50A
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
8
7
6
V
GS
= 4.5V
50
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
40
5
4
3
2
1
00
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
30
I
D
= 12.5A
V
GS
= 10V
20
10
30
0
2
6
8
10
12
14
16
18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
4
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
5
30
T
J
= 25°C
T
J
= -55°C
T
J
= 150°C
2
1.8
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= 10V
T
J
= 125°C
T
J
= 85°C
1.6
1.4
I
D
= 50A
V
GS
= 4.5V
1.2
1
0.8
0.6
0.4
-50
I
D
= 12.5A
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMT6005LPS
Document number: DS38867 Rev. 3 - 2
3 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMT6005LPS
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.012
V
GS(th )
, GATE THRESHOLD VOLTAGE (V)
2.5
0.01
V
GS
= 4.5V
2
I
D
= 1mA
0.008
I
D
= 12.5A
1.5
I
D
= 250µA
0.006
1
0.004
V
GS
= 10V
I
D
= 50A
0.002
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
150
C
T
, JUNCTION CAPACITANCE (pF)
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
C
iss
f = 1MHz
0
-50
I
S
, SOURCE CURRENT (A)
120
1000
C
oss
90
T
J
= 150°C
T
J
= 125°C
60
T
J
= 85°C
T
J
= 25°C
100
C
rss
30
T
J
= -55°C
10
0
0
0.3
0.6
0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.2
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
R
DS(ON)
Limited
100
P
W
= 10µs
P
W
= 1µs
10
9
8
7
V
GS
(V)
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
50
Q
g
(nC)
Figure 11. Gate Charge
V
DS
= 30V, I
D
= 50A
I
D
, DRAIN CURRENT (A)
P
W
= 1s
10
P
W
= 100ms
P
W
= 10ms
1
P
W
= 1ms
T
J(Max)
= 150℃
P
W
= 100µs
T
C
= 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= 10V
0.1
1
10
100
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMT6005LPS
Document number: DS38867 Rev. 3 - 2
4 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMT6005LPS
1
D=0.9
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1℃/W
Duty Cycle, D = t1/t2
0.0001
0.001
0.01
0.1
1
10
0.001
1E-06
1E-05
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMT6005LPS
Document number: DS38867 Rev. 3 - 2
5 of 7
www.diodes.com
May 2017
© Diodes Incorporated
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