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TIP100-BP

Description
TRANS NPN DARL 60V 8A TO-220
Categorysemiconductor    Discrete semiconductor   
File Size222KB,4 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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TIP100-BP Overview

TRANS NPN DARL 60V 8A TO-220

TIP100-BP Parametric

Parameter NameAttribute value
Transistor typeNPN - Darlington
Current - Collector (Ic) (Maximum)8A
Voltage - collector-emitter breakdown (maximum)60V
Vce saturation value (maximum value) when different Ib,Ic2.5V @ 80mA,8A
Current - collector cutoff (maximum)50µA
DC current gain (hFE) at different Ic, Vce (minimum value)1000 @ 3A,4V
Power - Max80W
Frequency - Transition-
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
TIP100
TIP101
TIP102
NPN Plastic
Medium-Power
Silicon Transistors
Features
Maximum Ratings
Symbol
V
CEO
Mounting Torgue:
5
in-lbs Maximum
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
High DC Current Gain : h
FE
=2500 (Typ) @ I
C
=4.0Adc
Halogen
free available upon request by adding suffix "-HF"
Low Collector-Emitter Saturation Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
TO-220 Compact package
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Parameter
Collector-Emitter Voltage
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
Rating
60
80
100
60
80
100
5.0
8.0
15
1.0
80
0.64
-55 to +150
-55 to +150
Min
Max
V
Unit
TO-220
B
F
C
S
Q
V
CBO
Collector-Base Voltage
V
V
A
A
A
W
O
W/ C
O
C
O
C
Units
V
EBO
I
C
I
CP
I
B
P
D
T
J
,
T
STG
Symbol
Emitter-Base Voltage
Collector Current-continuous
Collector Current-peak
Base Current
Collector Dissipation @T
C
=25
O
C
O
Derate above 25 C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Sustaining Voltage
(I
C
=30mAdc, I
B
=0)
TIP100
TIP101
TIP101
Collector Cut-off Current
(V
CE
=30Vdc, I
B
=0)
TIP100
(V
CE
=40Vdc, I
B
=0)
TIP101
(V
CE
=50Vdc, I
B
=0)
TIP102
Collector Cut-off Current
(V
CB
=60Vdc, I
E
=0)
TIP100
(V
CB
=80Vdc, I
E
=0)
TIP101
(V
CB
=100Vdc, I
E
=0)
TIP102
Emitter Cut-off Current
(V
BE
=5.0Vdc, I
C
=0)
T
A
U
1 2
H
K
3
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
CEO(SUS)
60
80
100
---
---
---
---
---
---
---
---
---
---
50
50
50
50
50
50
8.0
L
Vdc
V
D
J
R
G
N
I
CEO
µAdc
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
I
CBO
µAdc
I
EBO
mAdc
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
ON CHARACTERISTICS(1)
DC Current Gain
(I
C
=3.0Adc, V
CE
=4.0Vdc)
(I
C
=8.0Adc, V
CE
=4.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=3.0Adc, I
B
=6.0mAdc)
(I
C
=8.0Adc, I
B
=80mAdc)
V
BE(ON)
Base-Emitter On Voltage
(I
C
=8.0Adc,V
CE
=4.0Adc)
hfe
Small-Signal Current Gain
(I
C
=3.0Adc,V
CE
=4.0Vdc,f=1.0MHz)
C
ob
Output Capacitance
(V
CB
=10V, I
E
=0, f=0.1MHz)
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
h
FE(1)
1000
200
---
---
---
4.0
---
20000
---
2.0
2.5
2.8
---
200
----
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.625
14.22
15.88
.560
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
Vdc
Vdc
---
pF
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision: C
1 of 4
2013/01/01

TIP100-BP Related Products

TIP100-BP TIP101-BP TIP102-BP
Description TRANS NPN DARL 60V 8A TO-220 TRANS NPN DARL 80V 8A TO-220 TRANS NPN DARL 100V 8A TO-220
Transistor type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Maximum) 8A 8A 8A
Voltage - collector-emitter breakdown (maximum) 60V 80V 100V
Vce saturation value (maximum value) when different Ib,Ic 2.5V @ 80mA,8A 2.5V @ 80mA,8A 2.5V @ 80mA,8A
Current - collector cutoff (maximum) 50µA 50µA 50µA
DC current gain (hFE) at different Ic, Vce (minimum value) 1000 @ 3A,4V 1000 @ 3A,4V 1000 @ 3A,4V
Power - Max 80W 80W 80W
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole Through hole Through hole
Package/casing TO-220-3 TO-220-3 TO-220-3
Supplier device packaging TO-220 TO-220 TO-220

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