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H11AG1M — 6-Pin DIP Phototransistor Optocoupler
April 2015
H11AG1M
6-Pin DIP Phototransistor Optocoupler
Features
■
High-Efficiency Low-Degradation Liquid Epitaxial
Description
The H11AG1M device consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of high current transfer ratio
at both low output voltage and low input current. This
makes it ideal for use in low-power logic circuits, tele-
communications equipment and portable electronics
isolation applications.
IRED
■
Logic Level Compatible, Input and Output Currents,
with CMOS and LS/TTL
■
High DC Current Transfer Ratio at Low Input Currents
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