Thyristors
4 Amp High Temperature Sensitive SCRs
SJxx04xSx Series
Description
RoHS
This SJxx04x high temperature SCR series is ideal for
uni-directional switch applications such as phase control
in heating, motor speed controls, converters/rectifiers and
capacitive discharge ignitions
These SCRs have a low gate current trigger level of 20
μ
A
maximum at approximately 1.5V.
Features & Benefits
• Voltage capability up
to 600V
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
4
400 or 600
0.2
Unit
A
V
mA
• 150°C maximum junction
temperature
• Halogen free and RoHS
compliant
• Surge capability up
to 100A at 60Hz half cycle
Applications
Typical applications includes capacitive discharge system
for motorcycle engine CDI, portable generator engine
ignition, strobe lights and nailers, as well as generic
rectifiers, battery voltage regulators and converters. Also
controls for power tools, home/brown goods and white
goods appliances.
Schematic Symbol
A
K
G
Absolute Maximum Ratings — Sensitive SCRs
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
T
stg
T
J
V
DSM
/V
RSM
Parameter
RMS on-state current
Average on-state current
Peak non-repetitive surge current
I
2
t Value for fusing
Critical rate of rise of on-state current
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
Peak non-repetitive blocking voltage
Pw=100 μs
Test Conditions
T
C
= 130°C
T
C
= 130°C
single half cycle; f = 50 Hz;
T
J
(initial) = 25°C
single half cycle; f = 60 Hz;
T
J
(initial) = 25°C
t
p
= 8.3 ms
f = 60 Hz, T
J
= 150 °C
Pw=20 μs, T
J
= 150 °C
T
J
= 150 °C
Value
4
2.56
25
A
30
3.7
50
0.5
0.1
-40 to 150
-40 to 150
V
DRM
/V
RRM
+100
A
2
s
A/μs
A
W
°C
°C
V
Unit
A
A
SJxx04xSx Series
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
– Sensitive SCRs
Symbol
I
GT
V
GT
dv/dt
V
GD
V
GRM
I
H
t
q
t
gt
Test Conditions
MIN.
V
D
= 6V R
L
= 100
Ω
V
D
= V
DRM
; R
GK
= 220Ω ; T
J
= 125°C
V
D
= V
DRM
; R
L
= 3.3 kΩ; T
J
= 125°C
V
D
= V
DRM
; R
L
= 3.3 kΩ; TJ = 150°C
I
GR
= 10μA
I
T
= 20mA (initial)
t
p
=50µs; dv/dt=5V/µs; di/dt=-30A/µs
I
G
= 2 x I
GT
; PW = 15µs; I
T
= 8A
MAX.
MAX.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
TYP
.
Value
20
200
0.8
45
0.2
0.1
6
6
60
3
Unit
μA
μA
V
V/μs
V
V
V
mA
μs
μs
Static Characteristics
Symbol
V
TM
Test Conditions
I
T
= 8A; t
p
= 380 µs
T
J
= 25°C
I
DRM
/ I
RRM
@ V
DRM
/ V
RRM
T
J
= 125°C, R
GK
= 220Ω
T
J
= 150°C, R
GK
= 220Ω
400 - 600V
400 - 600V
400 - 600V
MAX.
MAX.
Value
1.6
5
1000
3000
μA
Unit
V
Thermal Resistances
Symbol
R
θ(J-C)
Parameter
Junction to case (AC)
Value
1.5
Unit
°C/W
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature (Sensitive SCR)
1.8
Figure 2: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
1.4
Ratio of I
GT
/ I
GT
(T
J
= 25°C)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-40
-15
R
GK
=220
Ratio of V
GT
/ V
GT
(T
J
= 25°C)
35
60
85
110
135 150
1.6
R
GK
=1K
1.2
1
0.8
0.6
0.4
0.2
10
0
-40
-15
10
35
60
85
110
135 15
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
SJxx04xSx Series
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
1.6
1.4
Figure 4: On-State Current vs. On-State
Voltage (Typical)
Intantaneous On-state Current (I
T
) – Amps
15
Ratio of I
H
/ I
H
(T
J
= 25°C)
1.2
1
0.8
0.6
0.4
0.2
0
-40
-15
10
35
60
85
110
135 15
12
9
6
3
0
0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
Junction Temperature (T
J
)
-- (°C)
Instantaneous On-state Voltage (V
T
) – Volts
Figure 5: Power Dissipation (Typical) vs. RMS
On-State Current
5
4.5
Figure 6: Maximum Allowable Case Temperature
vs. RMS On-State Current
160
150
Average On-State Power
Dissipation [P
D(AV)
] - (Watts)
°C
Maximum Allowable
Case Temperature (T
C
)-
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
140
130
120
110
100
90
80
0
1
2
3
(RMS)
]
4
- (Amps)
5
RMS On-State Current [I T
(RMS)
] - (Amps)
RMS On-State Current [
I
T
Figure 7: Maximum Allowable Case Temperature
vs. Average On-State Current
160
Figure 8: Peak Capacitor Discharge Current
1000
Maximum Allowable
Case Temperature (T
C
)-
°C
140
130
120
110
100
90
80
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Peak Discharge Current (I
TM
) - Amps
150
100
I
TRM
t
W
10
0.5
1.0
10.0
50.0
Average On -State Current [AV ] - (Amps)
Pulse Current Duration (t
W
) - ms
SJxx04xSx Series
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Figure 9: Surge Peak On-State Current vs. Number of Cycles
1000
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) – Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [I
T(RMS)
]: Maximum Rated
Value at Specified Case Temperature
100
10
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
1
1
10
100
1000
Surge Current Duration -- Full Cycles
Figure 10: Typical DC Gate Trigger Current with R
GK
vs.
Junction Temperature
10.00
Figure 11: Typical DC Holding Current with R
GK
vs.
Junction Temperature
10.0E+00
R
GK
=100
R
GK
=100
R
GK
=220
I
GT
(mA)
IH (mA)
1.00
R
GK
=470
1.0E+00
R
GK
=220
R
GK
=470
R
GK
=1K
R
GK
=1K
0.10
-40
-15
10
35
60
85
110
135 150
100.0E-03
-40
-15
10
35
60
85
110
135 150
Junction Temperature (T ) --
(°C)
Junction Temperature (T ) --
(°C)
Figure 12: Typical Static dv/dt with R
GK
vs. Junction
Temperature
1000
R
GK
=100
100
Static dv/dt (V/ s)
R
GK
=220
R
GK
=470
R
GK
=1K
10
1
25
75
125
SJxx04xSx Series
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
Thyristors
4 Amp High Temperature Sensitive SCRs
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (t
L
)
Pb – Free assembly
150°C
T
P
Temperature
t
P
Ramp-up
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
T
L
T
S(max)
t
L
Preheat
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
25
Time
Environmental Specifications
Test
AC Blocking
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Level 1, JEDEC-J-STD-020
Physical Specifications
Terminal Finish
Body Material
Lead Material
100% Matte Tin-plated
UL Recognized epoxy meeting
flammability rating V-0
Copper Alloy
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Low-Temp Storage
Resistance to
Solder Heat
Solderability
Lead Bend
Moisture Sensitivity
Level
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
SJxx04xSx Series
©2017 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 08/02/17
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