IPW80R360P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
PG-TO247-3
Features
•Best-in-classFOMR
DS(on)
*E
oss
;reducedQ
g
,C
iss
,andC
oss
•Best-in-classDPAKR
DS(on)
•Best-in-classV
(GS)th
of3VandsmallestV
(GS)th
variationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Drain
Pin 2, Tab
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Gate
Pin 1
Source
Pin 3
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Q
g,typ
I
D
E
oss
@ 500V
V
GS(th),typ
ESD class (HBM)
Type/OrderingCode
IPW80R360P7
Value
800
0.36
30
13
3.2
3
2
Package
PG-TO 247-3
Unit
V
Ω
nC
A
µJ
V
-
Marking
80R360P7
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.1,2018-02-12
800VCoolMOSªP7PowerTransistor
IPW80R360P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2018-02-12
800VCoolMOSªP7PowerTransistor
IPW80R360P7
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
3)
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AR
dv/dt
V
GS
P
tot
T
j
,T
stg
-
I
S
I
S,pulse
dv/dt
di
f
/dt
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
13
8.6
34
34
0.28
2.0
100
20
30
84
150
60
10
34
1
50
Unit
A
A
mJ
mJ
A
V/ns
V
W
°C
A
A
V/ns
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=2.0A; V
DD
=50V
I
D
=2.0A; V
DD
=50V
-
V
DS
=0to400V
static;
AC (f>1 Hz)
T
C
=25°C
-
T
C
=25°C
T
C
=25°C
V
DS
=0to400V,I
SD
<=2.8A,T
j
=25°C
Ncm M3 and M3.5 screws
A/µs
V
DS
=0to400V,I
SD
<=2.8A,T
j
=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.5
62
-
260
Unit
Note/TestCondition
°C/W -
°C/W leaded
°C/W n.a.
°C
1.6 mm (0.063 in.) from case for 10s
Thermal resistance, junction - ambient
R
thJA
Thermal resistance, junction - ambient
R
thJA
for SMD version
Soldering temperature, wavesoldering
only allowed at leads
T
sold
1)
2)
Limited by T
j max
. Maximum duty cycle D=0.5
Pulse width t
p
limited by T
j,max
3)
V
DClink
=400V;V
DS,peak
<V
(BR)DSS
;identicallowsideandhighsideswitchwithidenticalR
G
;t
cond
<2µs
Final Data Sheet
3
Rev.2.1,2018-02-12
800VCoolMOSªP7PowerTransistor
IPW80R360P7
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Values
Min.
800
2.5
-
-
-
-
-
-
Typ.
-
3
-
10
-
0.31
0.80
1
Max.
-
3.5
1
-
1
0.36
-
-
Unit
V
V
µA
µA
Ω
Ω
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=0.28mA
V
DS
=800V,V
GS
=0V,T
j
=25°C
V
DS
=800V,V
GS
=0V,T
j
=150°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=5.6A,T
j
=25°C
V
GS
=10V,I
D
=5.6A,T
j
=150°C
f=250kHz,opendrain
Gate-source leakage curent incl. zener
I
GSS
diode
Drain-source on-state resistance
Gate resistance
R
DS(on)
R
G
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Effective output capacitance, energy
related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
-
Typ.
930
16
27
336
10
6
40
6
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=500V,f=250kHz
V
GS
=0V,V
DS
=500V,f=250kHz
V
GS
=0V,V
DS
=0to500V
I
D
=constant,V
GS
=0V,V
DS
=0to500V
V
DD
=400V,V
GS
=13V,I
D
=5.6A,
R
G
=5.3Ω
V
DD
=400V,V
GS
=13V,I
D
=5.6A,
R
G
=5.3Ω
V
DD
=400V,V
GS
=13V,I
D
=5.6A,
R
G
=5.3Ω
V
DD
=400V,V
GS
=13V,I
D
=5.6A,
R
G
=5.3Ω
Table6Gatechargecharacteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
4
13
30
4.5
Max.
-
-
-
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=640V,I
D
=5.6A,V
GS
=0to10V
V
DD
=640V,I
D
=5.6A,V
GS
=0to10V
V
DD
=640V,I
D
=5.6A,V
GS
=0to10V
V
DD
=640V,I
D
=5.6A,V
GS
=0to10V
1)
2)
C
o(er)
isafixedcapacitancethatgivesthesamestoredenergyasC
oss
whileV
DS
isrisingfrom0to500V
C
o(tr)
isafixedcapacitancethatgivesthesamechargingtimeasC
oss
whileV
DS
isrisingfrom0to500V
Final Data Sheet
4
Rev.2.1,2018-02-12
800VCoolMOSªP7PowerTransistor
IPW80R360P7
Table7Reversediodecharacteristics
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
V
SD
t
rr
Q
rr
I
rrm
Values
Min.
-
-
-
-
Typ.
0.9
1100
12
19
Max.
-
-
-
-
Unit
V
ns
µC
A
Note/TestCondition
V
GS
=0V,I
F
=5.6A,T
f
=25°C
V
R
=400V,I
F
=2.8A,di
F
/dt=50A/µs
V
R
=400V,I
F
=2.8A,di
F
/dt=50A/µs
V
R
=400V,I
F
=2.8A,di
F
/dt=50A/µs
Final Data Sheet
5
Rev.2.1,2018-02-12
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