Preliminary Technical Information
X3-Class HiPerFET
TM
Power MOSFET
IXFT140N20X3HV
IXFQ140N20X3
IXFH140N20X3
V
DSS
I
D25
R
DS(on)
= 200V
= 140A
9.6m
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV (IXFT)
G
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-3P)
TO-268HV
TO-3P
TO-247
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
200
200
20
30
140
250
70
1.7
20
480
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4.0
5.5
6.0
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
G
D
TO-247 (IXFH)
G
D
S
D (Tab)
TO-3P (IXFQ)
D (Tab)
S
D (Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Features
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
200
2.5
4.5
V
V
Advantages
High Power Density
Easy to Mount
Space Savings
100
nA
10
A
500
A
8.0
9.6 m
Applications
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100843C(11/17)
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT140N20X3HV
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
Effective Output Capacitance
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-247& TO-3P
0.25
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
630
2000
28
20
130
12
127
39
32
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.26
C/W
C/W
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
55
94
1.6
7660
1290
4.6
S
pF
pF
pF
IXFQ140N20X3
IXFH140N20X3
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5 (External)
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 70A, -di/dt = 100A/μs
V
R
= 100V
105
420
8
Characteristic Values
Min.
Typ.
Max
140
540
1.4
A
A
V
ns
nC
A
Note 1. Pulse test, t
300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFT140N20X3HV
IXFQ140N20X3
IXFH140N20X3
o
Fig. 1. Output Characteristics @ T
J
= 25 C
140
120
100
V
GS
= 10V
9V
8V
450
400
350
7V
300
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= 10V
9V
I
D
- Amperes
80
60
6V
40
20
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I
D
- Amperes
8V
250
200
7V
150
100
50
5V
0
0
5
10
15
20
25
6V
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
140
120
100
V
GS
= 10V
8V
2.4
7V
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 70A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.0
I
D
= 140A
1.6
I
D
= 70A
1.2
I
D
- Amperes
80
60
40
5V
20
4V
0
0
0.5
1
1.5
2
2.5
3
6V
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
4.5
4.0
3.5
Fig. 5. R
DS(on)
Normalized to I
D
= 70A Value vs.
Drain Current
V
GS
= 10V
1.3
1.2
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
BV
DSS
/ V
GS(th)
- Normalized
R
DS(on)
- Normalized
T
J
= 125 C
3.0
2.5
2.0
1.5
1.0
0.5
0
50
100
150
200
250
300
350
400
450
T
J
= 25 C
o
o
1.1
1.0
0.9
0.8
0.7
0.6
-60
-40
-20
0
20
40
60
80
BV
DSS
V
GS(th)
100
120
140
160
I
D
- Amperes
T
J
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT140N20X3HV
IXFQ140N20X3
IXFH140N20X3
Fig. 7. Maximum Drain Current vs. Case Temperature
160
140
120
180
160
140
120
V
DS
= 10V
Fig. 8. Input Admittance
I
D
- Amperes
I
D
- Amperes
100
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
100
80
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
T
J
= 125 C
25 C
o
o
- 40 C
o
T
C
- Degrees Centigrade
V
GS
- Volts
Fig. 9. Transconductance
180
160
140
V
DS
= 10V
T
J
= - 40 C
350
300
o
Fig. 10. Forward Voltage Drop of Intrinsic Diode
400
g
f s
- Siemens
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
25 C
o
125 C
o
I
S
- Amperes
250
200
150
100
50
0
T
J
= 125 C
T
J
= 25 C
o
o
160
180
200
220
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
- Amperes
V
SD
- Volts
Fig. 11. Gate Charge
10
9
8
7
V
DS
= 100V
I
D
= 70A
I
G
= 10mA
100,000
Fig. 12. Capacitance
Capacitance - PicoFarads
10,000
Ciss
V
GS
- Volts
6
5
4
3
2
1
0
0
20
40
60
80
100
120
1,000
Coss
100
Crss
10
f
= 1 MHz
1
1
10
100
1,000
Q
G
- NanoCoulombs
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT140N20X3HV
IXFQ140N20X3
IXFH140N20X3
Fig. 13. Output Capacitance Stored Energy
12
1000
Fig. 14. Forward-Bias Safe Operating Area
R
DS(
on
)
Limit
10
100
25μs
E
OSS
- MicroJoules
8
I
D
- Amperes
100μs
10
6
4
1
2
T
J
= 150 C
T
C
= 25 C
Single Pulse
o
o
1ms
10ms
DC
10
100
1,000
0
0
20
40
60
80
100
120
140
15. Maximum Transient
Fig.
160 180 200
0.1
Thermal Impedance
1
1
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
0.4
aaaaa
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYS REF: F_140N20X3 (26-S202) 6-15-17
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