Data Sheet
BCR25FM-12LB
600V - 25A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 25 A
V
DRM
: 600 V
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
: 50 mA
•
Insulated Type
•
Planar Passivation Type
•
Viso: 2000 V
R07DS0964EJ0300
Rev.3.00
May 31, 2018
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
1 2
3
Application
Contactless AC switch, electric heater control, Printer, Copier and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage
Note6
Notes: 1. Gate open.
voltage
Note1
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
V
iso
Symbol
V
DRM
V
DSM
Ratings
25
250
313
5
0.5
10
2
–40
to +150
–40
to +150
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
V
Ta=25C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 62
C
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
50 Hz, surge on-state current
Unit
V
V
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 1 of 8
BCR25FM-12LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2.
3.
4.
5.
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
5.0
1.5
2.0
2.0
2.0
50
50
50
—
—
2.8
—
—
Unit
mA
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Test conditions
Tj = 125C, V
DRM
applied
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 40A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th(c-f)
in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
1. Junction temperature
Tj = 125 °C / 150 °C
2. Rate of decay of on-state commutating current
(di/dt)c =
–
13 A/ms
3. Peak off-state voltage
V
D
= 400 V
Time
(di/dt)c
Time
Time
V
D
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 2 of 8
BCR25FM-12LB
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
3
400
Rated Surge On-State Current
Surge On-State Current (A)
3.5
On-State Current (A)
300
10
2
Tj = 150°C
200
10
1
Tj = 25°C
100
10
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
10
1
P
G(AV)
= 0.5W
P
GM
= 5W
V
GT
= 2.0V
10
0
I
GM
= 2A
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Voltage (V)
10
2
I
FGT I
I
RGT I
I
RGT III
10
1
-40
0
40
80
120
160
10
-1
I
FGT I
I
RGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
Typical Example
10
3
I
RGT III
I
RGT I
Typical Example
10
2
10
2
I
FGT I
10
1
-40
0
40
80
120
160
10
1 0
10
10
1
10
2
Junction Temperature (°C)
Gate Current Pulse Width (s)
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 3 of 8
BCR25FM-12LB
Data Sheet
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Transient Thermal Impedance (°C/W)
10
2
4
10
3
10
4
10
5
10
3
No Fins
3
10
2
2
10
1
1
10
0
0
10
-1
10
0
10
1
10
2
10
- 1
10
1
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
Conduction Time (Cycles at 60Hz)
Maximum On-State Power Dissipation
40
160
Allowable Case Temperature vs.
RMS On-State Current
Curves apply
regardless of
conduction angle
On-State Power Dissipation (W)
30
Case Temperature (°C)
140
120
100
80
60
40
20
10
0
0
10
20
360° Conduction
Resistive,
inductive loads
30
40
360° Conduction
20
Resistive,
inductive loads
0
0
10
20
30
40
RMS On-State Current (A)
Allowable Ambient Tem perature vs.
RMS On-State Current
160
160 160 t2.3
120 120 t2.3
100 100 t2.3
RMS On-State Current (A)
Allowable Ambient Tem perature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
120
100
80
60
40
20
0
0
10
Ambient Temperature (°C)
140
140
120
100
80
60
40
20
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black
painted aluminum
and greased
20
30
40
0
0
1
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 4 of 8
BCR25FM-12LB
Data Sheet
Holding Current vs.
Junction Temperature
10
3
Distribution
Latching Current vs.
Junction Temperature
10
3
Distribution
V
D
=12V
III Quadrant
Typical Example
10
2
Latching Current (mA)
Holding Current (mA)
T
2
+, G-
Typical
Example
10
2
10
1
I Quadrant
Typical Example
10
1
T
2
-, G-
T
2
+, G+
Typical
Typical
Example Example
10
0
-40
0
40
80
120
160
10
0
-40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
×100
(%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
10
3
Typical Example
10
5
10
2
10
4
10
3
10
1
-40
0
40
80
120
160
10
2
-40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
III Quadrant
Typical Example
Tj = 150°C
Breakover Voltage (dv/dt = xV /s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
160
140
120
100
80
60
40
20
0
10
1
10
2
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
I Quadrant
10
3
10
4
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 5 of 8
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