Any combination of sectors can be concurrently erased.
Also supports full chip erase
■
Organized as 512Kx64, user configurable as 1Mx32, 2Mx16,
or 4Mx8.
■
Commercial, Industrial and Military Temperature Ranges
FIG. 1
PIN CONFIGURATION FOR WF512K64-XG4WX5
TOP VIEW
I/O
2
I/O
1
I/O
0
V
CC
WE
2
CS
2
NC
A
0
A
1
A
2
A
3
A
4
WE
1
CS
1
NC
CS
8
WE
8
A
5
A
6
A
7
A
8
A
9
NC
CS
7
WE
7
V
CC
I/O
63
I/O
62
I/O
61
A
0-18
OE
1
512K x 8
WE
1
CS
1
BLOCK DIAGRAM
WE
2
CS
2
WE
x
CS
x
WE
8
CS
8
2
512K x 8
......
8
8
512K x 8
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
GND
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
116
115
114
113
112
111
110
109
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
I/O
60
I/O
59
I/O
58
I/O
57
I/O
56
GND
I/O
55
I/O
54
I/O
53
I/O
52
I/O
51
I/O
50
I/O
49
I/O
48
GND
I/O
47
I/O
46
I/O
45
I/O
44
I/O
43
I/O
42
I/O
41
I/O
40
GND
I/O
39
I/O
38
I/O
37
I/O
36
I/O
35
8
8
8
I/O
0-7
I/O
8-15
I/O...
I/O
56-63
PIN
I/O
0-63
A
0-18
WE
1-8
CS
1-8
OE
V
CC
GND
NC
DESCRIPTION
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
May 1999 Rev.2
I/O
29
I/O
30
I/O
31
V
CC
WE
3
CS
3
NC
NC
A
18
A
17
A
16
A
15
WE
4
CS
4
OE
CS
5
WE
5
A
14
A
13
A
12
A
11
A
10
NC
CS
6
WE
6
V
CC
I/O
32
I/O
33
I/O
34
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K64-XG4WX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A
9
) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
Endurance (write/erase cycles) (Mil Temp)
A
9
Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
20 years
100,000 cycles min.
-2.0 to +14.0
V
Unit
°C
V
V
°C
°C
Parameter
OE capacitance
WE capacitance
CS capacitance
Data I/O capacitance
Address input capacitance
CAPACITANCE
(T
A
= +25°C)
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
100
20
20
20
100
Unit
pF
pF
pF
pF
pF
This parameter is guaranteed by design but not tested.
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade perfor-
mance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions, outputs
may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage
on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
V
CC
+ 0.5
+0.8
+125
+85
12.5
Unit
V
V
V
°C
°C
V
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
V
CC
Static Current
Output Low Voltage
Output High Voltage
Symbol
I
LI
I
LOx32
I
CC1
I
CC2
I
CC4
I
CC3
V
O
L
V
OH1
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz
CS = V
IL
, OE = V
IH
V
CC
= 5.5, CS = V
IH
, f = 5MHz
V
CC
= 5.5, CS = V
IH
I
OL
= 8.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
0.85
X
Min
Max
10
10
380
480
13
1.2
0.45
Unit
µA
µA
mA
mA
mA
mA
V
V
V
CC
Low V
CC
Lock-Out Voltage
V
LKO
3.2
4.2
V
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/
MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WF512K64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Chip and Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH1
is 1sec.
3. Typical value for Chip Erase Time is 8sec.
Symbol
Min
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
0
11
64
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
70
0
45
0
45
0
45
20
300
15
0
11
64
-70
Max
Min
90
0
45
0
45
0
45
20
300
15
0
11
64
-90
Max
Min
120
0
50
0
50
0
50
20
300
15
0
11
64
-120
Max
150
0
50
0
50
0
50
20
300
15
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
sec
sec
-150
Unit
FIG. 2
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
AC TEST CIRCUIT
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75 ½.
V
Z
is typically the midpoint of V
OH
and V
OL
.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(V
CC
= 5.0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
V
CC
Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH1
is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
t
OES
t
OEH
0
10
64
Symbol
Min
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
0
50
11
0
10
64
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
70
0
45
0
45
0
45
20
300
15
0
50
11
0
10
64
-70
Max
Min
90
0
45
0
45
0
45
20
300
15
0
50
11
0
10
64
-90
Max
Min
120
0
50
0
50
0
50
20
300
15
0
50
11
-120
Max
Min
150
0
50
0
50
0
50
20
300
15
-150
Max
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
µs
sec
ns
ns
sec
Unit
AC CHARACTERISTICS READ ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Address, CS or OE Change,
whichever is First
1. Guaranteed by design, but not tested
Symbol
Min
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
70
70
70
35
20
20
0
-70
Max
Min
90
90
90
35
20
20
0
-90
Max
Min
120
120
120
50
30
30
0
-120
Max
Min
150
150
150
55
35
35
-150
Max
ns
ns
ns
ns
ns
ns
ns
Unit
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WF512K64-XG4WX5
FIG. 3
AC WAVEFORMS FOR READ OPERATIONS
t
DF
t
OH
Addresses Stable
t
RC
t
OE
t
ACC
t
CE
WE
OE
Addresses
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
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Embedded System
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