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Datasheet> All Categories > storage> storage> WED3EG72M18S262JD3SG
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WED3EG72M18S262JD3SG

Description
128MB - 16Mx72 DDR SDRAM UNBUFFERED
Categorystorage    storage   
File Size198KB，12 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
Environmental Compliance
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WED3EG72M18S262JD3SG Overview

128MB - 16Mx72 DDR SDRAM UNBUFFERED

WED3EG72M18S262JD3SG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerWhite Electronic Designs Corporation
package instructionDIMM,
Reach Compliance Codeunknown
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N184
JESD-609 codee4
memory density1207959552 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals184
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

WED3EG72M18S262JD3SG Preview

White Electronic Designs
WED3EG7218S-JD3
PRELIMINARY*
128MB – 16Mx72 DDR SDRAM UNBUFFERED
FEATURES
Double-data-rate architecture
DDR200, DDR266, DDR333 and DDR400
• JEDEC design specified
BI-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh
Serial presence detect
Power supply:
•
V
CC
= V
CCQ
= 2.5V±0.2V
(100, 133 and 166MHz)
•
V
CC
= V
CCQ
= 2.6V±0.1V
(200MHz)
* This product is under development, is not qualified or characterized and is subject to
change without notice.
DESCRIPTION
The WED3EG7218S is a 16Mx72 Double Data Rate
SDRAM memory module based on 128Mb DDR SDRAM
component. The module consists of nine 16Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 184
pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
JEDEC 184 pin DIMM package
• JD3 PCB height: 30.48 (1.20") Max
NOTE: Consult factory for availability of:
• RoHS Products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR400 @CL=3
Clock Speed
CL-t
RCD
-t
RP
200MHz
3-3-3
DDR333 @CL=2.5
166MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR200 @CL=2
100MHz
2-2-2
June 2006
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
PIN CONFIGURATION
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
Front
V
REF
DQ0
V
SS
DQ1
DQS0
DQ2
V
CC
DQ3
NC
NC
V
SS
DQ8
DQ9
DQS1
V
CCQ
CK1
CK1#
V
SS
DQ10
DQ11
CKE0
V
CCQ
DQ16
DQ17
DQS2
V
SS
A9
DQ18
A7
V
CCQ
DQ19
A5
DQ24
V
SS
DQ25
DQS3
A4
V
CC
DQ26
DQ27
A2
V
SS
A1
CB0
CB1
V
CC
Pin
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
Front
DQS8
A0
CB2
V
SS
CB3
BA1
DQ32
V
CCQ
DQ33
DQS4
DQ34
V
SS
BA0
DQ35
DQ40
V
CCQ
WE#
DQ41
CAS#
V
SS
DQS5
DQ42
DQ43
V
CC
CS2#
DQ48
DQ49
V
SS
CK2#
CK2
V
CCQ
DQS6
DQ50
DQ51
V
SS
V
DDID
DQ56
DQ57
V
CC
DQS7
DQ58
DQ59
V
SS
NC
SDA
SCL
Pin
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
Front
V
SS
DQ4
DQ5
V
CCQ
DQM0
DQ6
DQ7
V
SS
NC
NC
*A13
V
CCQ
DQ12
DQ13
DQM1
V
CC
DQ14
DQ15
*CKE1
V
CCQ
*BA2
DQ20
A12
V
SS
DQ21
A11
DQM2
V
CC
DQ22
A8
DQ23
V
SS
A6
DQ28
DQ29
V
CCQ
DQM3
A3
DQ30
V
SS
DQ31
CB4
CB5
V
CCQ
CK0
CK0#
Pin
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
Front
V
SS
DQM8
A10
CB6
V
CCQ
CB7
V
SS
DQ36
DQ37
V
CC
DQM4
DQ38
DQ39
V
SS
DQ44
RAS#
DQ45
V
CCQ
CS0#
*CS1#
DQM5
V
SS
DQ46
DQ47
*CS3#
V
CCQ
DQ52
DQ53
NC
V
CC
DQM6
DQ54
DQ55
V
CCQ
NC
DQ60
DQ60
V
SS
DQM7
DQ62
DQ63
V
CCQ
SA0
SA1
SA2
V
CCSPD
A0 – A12
BA0-BA1
DQ0-DQ63
CB0-CB7
DQS0-DQS8
CK0, CK1, CK2
CK0#, CK1#, CK2#
CKE0
CS0#
RAS#
CAS#
WE#
DQM0-DQM8
V
CC
V
CCQ
V
SS
V
REF
V
CCSPD
SDA
SCL
SA0-SA2
V
DDID
NC
WED3EG7218S-JD3
PRELIMINARY
PIN NAMES
Address input (Multiplexed)
Select Bank Address
Data Input/Output
Check bits
Data Strobe Input/Output
Clock input
Clock input
Clock Enable input
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
Data-in Mask
Power Supply (2.5V)
Power Supply for DQS (2.5V)
Ground
Power Supply for Reference
Serial EEPROM Power Supply (2.3V to 3.6V)
Serial data I/O
Serial clock
Address in EEPROM
V
DD
Identification Flag
No Connect
* Not Used
June 2006
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
CS0#
DQS0
DQM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DQM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS8
DQM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
SCL
WP
SERIAL PD
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DQM7
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DQS4
DQM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DQM5
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
WED3EG7218S-JD3
PRELIMINARY
SDA
A0
SA0
A1
SA1
A2
SA2
V
CCSPD
RAS#
CAS#
BA0-BA1
WE#
A0-A12
CKE0
RAS#: DDR SDRAMs
CAS#: DDR SDRAMs
BA0-BA1: DDR SDRAMs
WE#: DDR SDRAMs
A0-A12: DDR SDRAMs
CKE0: DDR SDRAMs
SPD
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
V
CCQ
V
CC
V
REF
V
SS
CLOCK INPUT
CK0, CK0#
CK1, CK1#
CK2, CK2#
3 SDRAMS
3 SDRAMS
3 SDRAMS
NOTE: All resistor values are 22 ohms unless otherwise specified
June 2006
Rev. 2
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Notes:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
WED3EG7218S-JD3
PRELIMINARY
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
0S
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
9
50
Units
V
V
°C
W
mA
DC CHARACTERISTICS
(0°C
≤
T
A
≤
70°C, V
CC
= 2.5V ± O.2V)
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
1.15
1.15
V
REF
+0.15
-0.3
V
TT
+0.76
—
Max
2.7
2.7
1.35
1.35
V
CCQ
+0.3
V
REF
+0.15
—
V
TT
-0.76
Unit
V
V
V
V
V
V
V
V
CAPACITANCE
(TA = 25°C. f = 1MHz, V
CC
= 2.5V)
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0, CKE1)
Input Capacitance (CK0,CK0#)
Input Capacitance (CS0#, CS1#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data Input/Output capacitance (DQ0-DQ63)(DQS)
Data Input/Output Capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
45
45
45
40
44
15
45
15
15
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
June 2006
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
WED3EG7218S-JD3
PRELIMINARY
I
CC
SPECIFICATIONS AND TEST CONDITIONS
DDR400: V
CC =
V
CCQ
= +2.6V ± 0.1V; DDR333, 266, 200: V
CC =
V
CCQ
= +2.5V ± 0.2V includes DDR SDRAM component only
Parameter
Symbol
Conditions
One device bank; Active =
Precharge; T
RC
=T
RC
(MIN);
T
CK
=T
CK
(MIN); DQ,DM and DQS
inputs changing once per clock cycle;
Address and control inputs changing
once every two cycles
One device bank; Active-read-
Precharge; Burst = 2; T
RC
=T
RC
(MIN);
T
CK
=T
CK
(MIN); lout=0mA; Address
and control inputs changing once per
clock cycle
All device banks idle; Power-down
mode; T
CK
=T
CK
(MIN); CKE=(low)
CS# = High; All device banks idle;
T
CK
=T
CK
(MIN); CKE=high; Address
and other control inputs changing
once per clock cycle. V
IN
= V
REF
for
DQ, DQS and DM.
One device bank active; Power-down
mode; T
CK
(MIN); CKE=(low)
CS# = High; CKE = High; One
device bank; Active-Precharge; T
RC
= T
RAS
(MAX); T
CK
= T
CK
(MIN); DQ,
DM and DQS inputs changing twice
per clock cycle; Address and other
control inputs changing once per
clock cycle.
Burst = 2; Reads; Continous burst;
One device bank active; Address
and control inputs changing once per
clock cycle;
T
CK
= T
CK
(MIN); lout = 0mA
Burst = 2; Writes; Continous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; T
CK
= T
CK
(MIN); DQ, DM
and DQS inputs changing twice per
clock cycle.
T
RC
= T
RC
(MIN)
CKE
≤ 0.2V
Standard
Low Power
5
DDR400@
CL=3
Max
DDR333@
CL=2.5
Max
DDR266@
CL=2
Max
DDR266@
CL=2.5
Max
DDR200@
CL=2
Max
Units
Operating
Current
I
CC0
990
990
810
mA
Operating
Current
Precharge
Power-Down
Standby
Current
Idle Standby
Current
Active Power-
Down Standby
Current
I
CC1
1260
1260
1035
mA
I
CC2P
270
270
255
mA
I
CC2F
495
495
405
mA
I
CC3P
315
315
270
mA
Active Standby
Current
I
CC3N
540
540
450
mA
Operating
Current
I
CC4R
1800
1800
1485
mA
Operating
Current
I
CC4W
1935
1935
1530
mA
Auto Refresh
Current
Self Refresh
Current
June 2006
Rev. 2
I
CC5
I
CC6
1935
18
9
1935
18
9
1530
18
9
mA
mA
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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