STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
STF20NM60D
STP20NM60FD
STW20NM60FD
■
■
■
■
■
V
DSS
600V
600V
600V
R
DS(on)
<0.29Ω
<0.29Ω
<0.29Ω
I
D
20A
20A
20A
Pw
192W
45W
214W
TO-247
3
1
2
TO-220FP
High dv/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
1
3
2
Low gate input resistancE
Tight process control and high manufacturing
yields
TO-220
Internal schematic diagram
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
■
Switching application
Order codes
Part number
STF20NM60D
STP20NM60FD
STW20NM60FD
Marking
F20NM60D
P20NM60FD
W20NM60FD
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
August 2006
Rev 4
1/15
www.st.com
15
Contents
STF20NM60D - STP20NM60FD - STW20NM60FD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (2)
P
TOT
Absolute maximum ratings
Value
Parameter
TO-220
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
20
12.6
80
192
1.20
TO-220FP
600
600
± 30
20
(1)
12.6
(1)
80
(1)
45
0.36
20
-
2500
– 65 to 150
-
20
12.6
80
214
1.42
TO-247
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Unit
dv/dt
(3)
Peak diode recovery voltage slope
V
ISO
T
j
T
stg
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
< 20A, di/dt < 400A/µs, V
DD
= 80%V
(BR)DSS
Table 2.
Symbol
Thermal resistance
Value
Parameter
TO-220
TO-220FP
2.8
62.5
300
TO-247
0.585
30
°C/W
°C/W
°C
0.65
Unit
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T
l
Maximum lead temperature for soldering
purpose
Table 3.
Symbol
I
AR
E
AS
Avalanche data
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
Value
10
700
Unit
A
mJ
3/15
Electrical characteristics
STF20NM60D - STP20NM60FD - STW20NM60FD
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125 °C
V
GS
= ±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
3
4
Min
600
1
10
±10
0
5
Typ Max Unit
V
µA
µA
µA
V
Ω
0.26 0.29
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min
Typ Max Unit
9
1300
500
35
190
2.7
37
10
17
S
pF
pF
pF
pF
Ω
nC
nC
nC
C
oss eq. (2)
Equivalent output capacitance V
GS
= 0V, V
DS
= 0V to 480V
R
G
Q
g
Q
gs
Q
gd
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
V
DD
= 480V, I
D
= 20A,
V
GS
= 10V
(see Figure 17)
52
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
4/15
STF20NM60D - STP20NM60FD - STW20NM60FD
Table 6.
Symbol
t
d(on)
t
r
t
r(Voff)
t
f
t
c
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V
DD
= 300V, I
D
= 10A
R
G
= 4.7Ω V
GS
= 10V
(see Figure 16)
V
DD
= 480 V, I
D
= 20A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 16)
Min.
Typ.
25
12
8
22
30
Max. Unit
ns
ns
ns
ns
ns
Table 7.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, V
GS
= 0
I
SD
= 20 A, T
j
= 25°C
di/dt =100A/µs,V
DD
=60V
(see Figure 21)
I
SD
= 20 A, T
j
= 150°C
di/dt =100A/µs,V
DD
=60V
(see Figure 21)
240
1800
16
396
2960
20
Test conditions
Min
Typ.
Max
20
80
1.5
Unit
A
A
V
ns
nC
A
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
5/15
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