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BBY5805WE6327BTSA1

Description
DIODE TUNING HIGH Q CC SOT-323
Categorysemiconductor    Discrete semiconductor   
File Size113KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BBY5805WE6327BTSA1 Overview

DIODE TUNING HIGH Q CC SOT-323

BBY5805WE6327BTSA1 Parametric

Parameter NameAttribute value
Capacitance at different Vr, F5.5pF @ 6V,1MHz
capacitance ratio3.5
Capacitance ratio conditionsC1/C4
Voltage - Peak Reverse (Maximum)10V
Diode type1 pair of common cathodes
Q value at different Vr, F-
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingPG-SOT323-3
BBY58...
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
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Type
BBY58-02L
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
Configuration
single, leadless
single
single
single
common cathode
common anode
L
S
(nH)
0.4
0.6
0.6
0.6
1.4
1.4
Marking
88
8
88
8 yel.
B5s
B6s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
I
F
T
op
T
stg
Value
10
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-09-19

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