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BC857SE6327BTSA1

Description
TRANS 2PNP 45V 0.1A SOT363
Categorysemiconductor    Discrete semiconductor   
File Size846KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BC857SE6327BTSA1 Overview

TRANS 2PNP 45V 0.1A SOT363

BC857SE6327BTSA1 Parametric

Parameter NameAttribute value
Transistor type2 PNP (double)
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic650mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,5V
Power - Max250mW
Frequency - Transition250MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casing6-VSSOP,SC-88,SOT-363
Supplier device packagingPG-SOT363-6
BC856S/U_BC857S
PNP Silicon AF Transistor Arrays
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated transistor
with good matching in one package
BC856S / U, BC857S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BC856S/U
BC857S
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07175
Type
BC856S
BC856U
BC857S
Marking
3Ds
3Ds
3Cs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
2011-07-25

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