Data sheet, BGB540, Sept. 2002
BGB540
Active Biased RF Transistor
MMIC
Wireless
Silicon Discretes
N e v e r
s t o p
t h i n k i n g .
Edition 2002-09-11
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
©
Infineon Technologies AG 2002.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted charac-
teristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infi-
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BGB540
Data sheet
Revision History:
Previous Version:
Page
4-9
2002-09-11
2001-08-16
Subjects (major changes since last revision)
RF parameters and SPICE model updated
Preliminary status removed
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
Active Biased RF Transistor
BGB540
Features
•
•
•
•
•
•
G
ms
= 18dB at 1.8GHz
Small SOT343 package
Current easy adjustable by an external resistor
Open collector output
Typical supply voltage: 1.4-4.3V
SIEGET
®
-45 technology
Applications
• For high gain low noise amplifiers
• Ideal for wideband applications, cellular phones,
cordless telephones, SAT-TV and high frequency
oscillators
Bias,4
Bias
C,3
Description
SIEGET
®
-45 NPN Transistor with integrated
biasing for high gain low noise figure
applications. I
C
can be controlled using I
Bias
according to I
C
=10*I
Bias .
B,1
E,2
ESD:
Electrostatic discharge sensitive device, observe handling precaution!
Type
BGB540
Data sheet
Package
SOT343
Marking
MCs
4
Chip
T0559
2002-09-11
BGB540
Maximum Ratings
Parameter
Maximum collector-emitter voltage
Maximum collector current
Maximum bias current
Maximum emitter-base voltage
Maximum base current
Total power dissipation, T
S
< 75°C
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal resistance: junction-soldering point
Symbol
V
CE
I
C
I
Bias
V
EB
I
B
P
tot
T
j
T
A
T
STG
R
th JS
Value
4.5
80
8
1.2
0.7
250
150
-65 ... +150
-65 ... +150
300
Unit
V
mA
mA
V
mA
mW
°C
°C
°C
K/W
Notes:
For detailed symbol description refer to figure 1.
1)
T
S
is measured on the emitter lead at the soldering point to the PCB
I
Bias
Bias,4
Bias
I
C
C,3
V
CE
B,1
V
EB
I
B
E,2
Fig. 1: Symbol definition
Data sheet
5
2002-09-11