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BGB 540 E6327

Description
TRANSISTOR RF ACT BIAS SOT-343
Categorysemiconductor    Discrete semiconductor   
File Size95KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BGB 540 E6327 Overview

TRANSISTOR RF ACT BIAS SOT-343

BGB 540 E6327 Parametric

Parameter NameAttribute value
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)3.5V
Frequency - Transition-
Noise figure (dB, typical values ​​at different f)1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain16dB ~ 17.5dB
Power - Max120mW
DC current gain (hFE) at different Ic, Vce (minimum value)-
Current - Collector (Ic) (Maximum)30mA
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSC-82A,SOT-343
Supplier device packagingPG-SOT343-4
Data sheet, BGB540, Sept. 2002
BGB540
Active Biased RF Transistor
MMIC
Wireless
Silicon Discretes
N e v e r
s t o p
t h i n k i n g .

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