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BSP129L6906HTSA1

Description
MOSFET N-CH 240V 350MA SOT-223
CategoryDiscrete semiconductor    The transistor   
File Size451KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BSP129L6906HTSA1 Overview

MOSFET N-CH 240V 350MA SOT-223

BSP129L6906HTSA1 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage240 V
Maximum drain current (ID)0.35 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)1.4 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
BSP129
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Product Summary
V
DS
R
DS(on),max
I
DSS,min
240
6
0.05
V
W
A
PG-SOT223
Type
Type
BSP129
BSP129
BSP129
BSP129
Package
Package
PG-SOT223
PG-SOT223
PG-SOT223
PG-SOT223
Tape and Reel
Tape and Reel
H6327: 1000 pcs/reel
L6327: 1000 pcs/reel
H6906: 1000 pcs/reel
sorted in
V
GS(th)
bands
   1)
L6906: 1000 pcs/reel soed
Marking
Packaging
Marking
Packaging
BSP129
Non dry
BSP129
Non dry
BSP129
Non dry
BSP129
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.36 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.35
0.28
1.4
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD class (JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
1A(>250V,<500V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 1.42
page 1
2012-11-29

BSP129L6906HTSA1 Related Products

BSP129L6906HTSA1 BSP129 BSP129E6327 BSP129E6327T BSP129H6327 BSP129H6906
Description MOSFET N-CH 240V 350MA SOT-223 0.19 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET mosfet N-CH 240v 350ma sot223 MOSFET N-CH 240V 350MA SOT223 Drain-source voltage (Vdss): 240V Continuous drain current (Id) (at 25°C): 350mA Gate-source threshold voltage: 1V @ 108uA Drain-source on-resistance: 6Ω @ 350mA, 10V Maximum power dissipation (Ta= 25°C): 1.8W Type: N-channel N-channel, 240V, 350mA, 6Ω@10V Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SOT-223, 4 PIN - SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant compli compli - compliant compliant
Shell connection DRAIN DRAIN DRAIN - DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 240 V 240 V 240 V - 240 V 240 V
Maximum drain current (ID) 0.35 A 0.35 A 0.2 A - 0.35 A 0.35 A
Maximum drain-source on-resistance 6 Ω 20 Ω 20 Ω - 20 Ω 20 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 - R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 - 1 1
Number of terminals 4 4 4 - 4 4
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE - DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 1.4 A 1.4 A 0.6 A - 1.4 A 1.4 A
surface mount YES YES YES - YES YES
Terminal form GULL WING GULL WING GULL WING - GULL WING GULL WING
Terminal location DUAL DUAL DUAL - DUAL DUAL
Transistor component materials SILICON SILICON SILICON - SILICON SILICON
Is it Rohs certified? - conform to incompatible - conform to conform to
Maker - Infineon Infineon - Infineon Infineon
Contacts - 4 4 - 4 4
ECCN code - EAR99 EAR99 - EAR99 EAR99
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 260 - NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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