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BSS126 E6327

Description
MOSFET N-CH 600V 0.021A SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size254KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSS126 E6327 Overview

MOSFET N-CH 600V 0.021A SOT-23

BSS126 E6327 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C21mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)0V,10V
Rds On (maximum value) when different Id, Vgs500 ohms @ 16mA, 10V
Vgs (th) (maximum value) when different Id1.6V @ 8µA
Gate charge (Qg) at different Vgs (maximum value)2.1nC @ 5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)28pF @ 25V
FET functionexhaustion mode
Power dissipation (maximum)500mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPG-SOT23-3
Package/casingTO-236-3,SC-59,SOT-23-3
BSS126
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
DSS,min
600
700
V
0.007 A
PG-SOT-23
Type
BSS126
BSS126
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
Marking
SHs
SHs
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.016 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.021
0.017
0.085
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD
class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
0 (<250V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
0.50
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 1.6
page 1
2009-08-18

BSS126 E6327 Related Products

BSS126 E6327 BSS126 L6327 BSS126 E6906 BSS126L6327HTSA1 BSS126L6906HTSA1
Description MOSFET N-CH 600V 0.021A SOT-23 mosfet N-CH 600v 21ma sot-23 MOSFET N-CH 600V 0.021A SOT-23 MOSFET N-CH 600V 0.021A SOT-23 MOSFET N-CH 600V 0.021A SOT-23
FET type N channel - N channel N channel N channel
technology MOSFET (metal oxide) - MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 600V - 600V 600V 600V
Current - Continuous Drain (Id) at 25°C 21mA(Ta) - 21mA(Ta) 21mA(Ta) 21mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 0V,10V - 0V,10V 0V,10V 0V,10V
Rds On (maximum value) when different Id, Vgs 500 ohms @ 16mA, 10V - 500 ohms @ 16mA, 10V 500 ohms @ 16mA, 10V 500 ohms @ 16mA, 10V
Vgs (th) (maximum value) when different Id 1.6V @ 8µA - 1.6V @ 8µA 1.6V @ 8µA 1.6V @ 8µA
Gate charge (Qg) at different Vgs (maximum value) 2.1nC @ 5V - 2.1nC @ 5V 2.1nC @ 5V 2.1nC @ 5V
Vgs (maximum value) ±20V - ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 28pF @ 25V - 28pF @ 25V 28pF @ 25V 28pF @ 25V
FET function exhaustion mode - exhaustion mode exhaustion mode exhaustion mode
Power dissipation (maximum) 500mW(Ta) - 500mW(Ta) 500mW(Ta) 500mW(Ta)
Operating temperature -55°C ~ 150°C(TJ) - -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount - surface mount surface mount surface mount
Supplier device packaging PG-SOT23-3 - PG-SOT23-3 SOT-23-3 SOT-23-3
Package/casing TO-236-3,SC-59,SOT-23-3 - TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3
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