SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220FP
PG-TO262
650
0.28
15
PG-TO220
V
Ω
A
•
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP15N60C3
SPI15N60C3
SPA15N60C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4600
Q67040-S4601
SP000216325
Marking
15N60C3
15N60C3
15N60C3
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
I
D
15
9.4
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
dv/dt
page 1
Value
SPP_I
SPA
Unit
A
15
1)
9.4
1)
45
460
0.8
15
±20
±30
34
W
°C
V/ns
2009-12-22
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=7.5A,
V
DD
=50V
45
460
0.8
15
±20
±30
156
15
A
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=15A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
Reverse diode dv/dt
6)
Rev.
3.2
A
V
-55...+150
Rev. 3.3
Page 1
2018-02-12
SPP15N60C3, SPI15N60C3
SPA15N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 15 A,
T
j
= 125 °C
Symbol
dv/dt
Value
50
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature,
wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
min.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=675µA,
V
GS =VDS
V
DS
=600V,
V
GS
=0V,
T
j
=25°C
T
j
=150°C
Symbol
min.
R
thJC
R
thJC_FP
R
thJA
R
thJA_FP
T
sold
-
-
-
-
-
Values
typ.
-
-
-
-
-
max.
0.8
3.7
62
80
260
Unit
K/W
°C
Values
typ.
-
700
3
0.1
-
-
0.25
0.68
1.23
max.
-
-
3.9
600
-
2.1
-
-
-
-
-
-
Unit
V
V
(BR)DS
V
GS
=0V,
I
D
=15A
µA
1
100
100
0.28
-
-
nA
Ω
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
V
GS
=10V,
I
D
=9.4A
T
j
=25°C
T
j
=150°C
Drain-source on-state resistance
R
DS(on)
Gate input resistance
R
G
f=1MHz,
open drain
Rev. 3.3
Page 2
2018-02-12
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
g
fs
C
iss
C
oss
C
rss
V
GS
=0V,
V
DS
=0V to 480V
Conditions
min.
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=9.4A
V
GS
=0V,
V
DS
=25V,
f=1MHz
Values
typ.
11.9
1660
540
40
80
127
10
5
50
5
max.
-
-
-
-
-
-
-
-
80
10
-
-
-
-
-
-
Unit
S
pF
Effective output capacitance,
4)
C
o(er)
energy related
Effective output capacitance,
5)
C
o(tr)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
=480V,
V
GS
=0/10V,
I
D
=15A,
R
G
=4.3Ω
-
-
-
-
ns
V
DD
=480V,
I
D
=15A
-
-
-
-
7
29
63
5
-
-
-
-
nC
V
DD
=480V,
I
D
=15A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=480V,
I
D
=15A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
=E *f.
AR
AV
3Soldering temperature for TO-263: 220°C, reflow
4
C
5
C
o(er)
o(tr)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
6
I <=I , di/dt<=400A/us, V
SD
D
DClink
=400V, V
peak
<V
BR, DSS
, T
j
<T
j,max
.
Identical low-side and high-side switch.
Rev.
3.2
page
3
2009-12-22
Rev. 3.3
Page 3
2018-02-12
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
SPP_I
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.012
0.023
0.043
0.156
0.178
0.072
Value
SPA
0.012
0.023
0.043
0.176
0.371
2.522
K/W
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
T
case
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
di
rr
/dt
Conditions
min.
T
C
=25°C
Values
typ.
-
-
1
460
27
55
1300
max.
15
45
1.2
-
-
-
-
-
-
Unit
A
V
GS
=0V,
I
F
=I
S
V
R
=480V,
I
F
=I
S
,
di
F
/dt=100A/µs
-
-
-
-
-
V
ns
µC
A
A/µs
T
j
=25°C
Unit
Symbol
SPP_I
Value
SPA
0.0002495
0.0009406
0.001298
0.00362
0.008025
0.412
0.0002495
0.0009406
0.001298
0.00362
0.009046
0.412
Unit
Ws/K
T
j
R
th1
E xternal H eatsink
P
tot
(t)
C
th1
C
th2
C
th,n
T
am b
Rev. 3.3
Page 4
2018-02-12
SPP15N60C3, SPI15N60C3
SPA15N60C3
1 Power dissipation
P
tot
=
f
(T
C
)
170
SPP15N60C3
2 Power dissipation FullPAK
P
tot
=
f
(T
C
)
35
W
W
140
120
25
P
tot
100
80
P
tot
20
15
60
10
40
20
0
0
5
20
40
60
80
100
120
160
0
0
°C
20
40
60
80
100
120
T
C
°C
160
T
j
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
=25°C
10
2
4 Safe operating area FullPAK
I
D
=
f
(V
DS
)
parameter:
D
= 0,
T
C
= 25°C
10
2
A
A
10
1
10
1
I
D
10
0
I
D
10
0
10
-1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
-1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
-2 0
10
10
1
10
2
10
V
V
DS
3
10
-2 0
10
10
1
10
2
10
V
V
DS
3
Rev.
3.2
page
5
2009-12-22
Rev. 3.3
Page 5
2018-02-12
Analog electronics
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