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VS-10ETF04S-M3

Description
DIODE GEN PURP 400V 10A D2PAK
CategoryDiscrete semiconductor    diode   
File Size316KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-10ETF04S-M3 Overview

DIODE GEN PURP 400V 10A D2PAK

VS-10ETF04S-M3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionD2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresFREE WHEELING DIODE
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current140 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Maximum repetitive peak reverse voltage400 V
Maximum reverse current100 µA
Maximum reverse recovery time0.2 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed and qualified
JEDEC
®
-JESD 47
J-STD-020,
to
2
1
3
1
Anode -
3
- Anode
according
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Snap factor
Package
Circuit configuration
D
2
PAK
10 A
200 V, 400 V, 600 V
1.2 V
140 A
50 ns
150 °C
0.6
(TO-263AB)
Single
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
• Input rectifications where severe
conducted EMI should be met
restrictions
DESCRIPTION
The VS-10ETF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
10 A, T
J
= 25 °C
Range
Sinusoidal waveform
CHARACTERISTICS
VALUES
200 to 600
10
140
50
1.2
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF02S-M3
VS-10ETF04S-M3
VS-10ETF06S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
2.5
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 128 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
115
140
66
94
940
A
2
s
A
2
s
A
UNITS
Revision: 04-Jan-18
Document Number: 94884
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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