Preliminary
Datasheet
RJK0328DPB-01
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 1.6 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0264EJ0500
(Previous: REJ03G1637-0400)
Rev.5.00
Mar 01, 2011
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note1
Ratings
30
20
60
240
60
30
90
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
Page 1 of 6
RJK0328DPB-01
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Q
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.6
2.1
100
6380
1150
330
0.7
42
15
8.8
9.4
4.3
61.5
7.3
0.78
42
46
Max
—
0.1
1
2.5
2.1
2.9
—
—
—
—
—
—
—
—
—
—
—
—
1.02
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 30 A, V
GS
= 10 V
Note4
I
D
= 30 A, V
GS
= 4.5 V
Note4
I
D
= 30 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 60 A
V
GS
= 10 V, I
D
= 30 A,
V
DD
10 V, R
L
= 0.33
,
Rg = 4.7
I
F
= 60 A, V
GS
= 0
Note4
I
F
= 60 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
Page 2 of 6
RJK0328DPB-01
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
10
100
60
10
μ
s
0
μ
s
Channel Dissipation
1 ms
Drain Current
40
10
PW = 10 ms
DC
Op
on
ati
er
20
1
Operation in
this area is
limited by R
DS(on)
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
Pulse Test
4.5 V
3.2 V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
10 V
3.0 V
60
I
D
(A)
Drain Current
2.8 V
80
80
60
Drain Current
40
40
25°C
Tc = 75°C
–25°C
20
20
V
GS
= 2.6 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage
V
DS (on)
(mV)
10
Pulse Test
Pulse Test
150
3
V
GS
= 4.5 V
10 V
100
1
50
I
D
= 20 A
10 A
5A
0.3
0
0.1
1
3
10
30
100
300 1000
4
8
12
16
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
Page 3 of 6
RJK0328DPB-01
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Ciss
Capacitance C (pF)
8
1000
Coss
300
Crss
100
30
V
GS
= 0
f = 1 MHz
10
20
30
6
I
D
= 5 A, 10 A, 20 A
V
GS
= 4.5 V
2
0
–25
10 V
0
25
50
5 A, 10 A, 20 A
75
100 125 150
4
10
0
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
100
Dynamic Input Characteristics
V
DS
(V)
50
V
GS
16
Reverse Drain Current I
DR
(A)
I
D
= 60 A
V
DD
= 25 V
10 V
Pulse Test
10 V
80
5V
40
Drain to Source Voltage
30
V
DS
20
12
Gate to Source Voltage
60
8
40
V
GS
= 0, –5V
10
V
DD
= 25 V
10 V
0
40
80
120
160
4
20
0
0
200
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
I
AP
= 30 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
Page 4 of 6
RJK0328DPB-01
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.3
Preliminary
0.5
0.2
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
0.1
θch
– c = 1.92°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.03
0.05
2
0.0
lse
01
t pu
0.
o
h
1s
100
μ
0.01
10
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
Page 5 of 6
京公网安备 11010802033920号
EEWORLD
