EEWORLDEEWORLDEEWORLD

Part Number

Search

HN4C06J-BL(TE85L,F

Description
TRANS 2 NPN 120V 100MA SC74A
Categorysemiconductor    Discrete semiconductor   
File Size338KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

HN4C06J-BL(TE85L,F Overview

TRANS 2 NPN 120V 100MA SC74A

HN4C06J-BL(TE85L,F Parametric

Parameter NameAttribute value
Transistor type2 NPN (dual) common emitter
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)120V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 1mA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,6V
Power - Max300mW
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSC-74A,SOT-753
Supplier device packagingSMV
HN4C06J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C06J
Audio Frequency General Purpose Amplifier Applications
High voltage : V
CEO
= 120V
High h
FE
: h
FE
= 200 to 700
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Low noise : NF = 1dB(typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
120
120
5
100
20
300
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3L1A
temperature/current/voltage and the significant change in
Weight: 0.014g(Typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
NF
Test
Circuit
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 6V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
=
6 V, I
C
=
0.1 mA
f
=
1 kHz, R
G
=
10 kΩ
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
Classification
GR(G): 200 to 400, BL (L): 350 to 700
(
) Marking Symbol.
Marking
Type Name
hFE Rank
Equivalent Circuit
(Top View)
5
4
Q1
Q2
DG
Start of commercial production
1
2
3
2000-03
1
2014-03-01

HN4C06J-BL(TE85L,F Related Products

HN4C06J-BL(TE85L,F HN4C06J-GR HN4C06J-GR(TE85L,F HN4C06JGR HN4C06J-BL HN4C06JBL
Description TRANS 2 NPN 120V 100MA SC74A TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
Maker - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction - SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Contacts - 5 - 5 5 5
Reach Compliance Code - unknown unknown unknown unknown unknown
Other features - LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage - 120 V 120 V 120 V 120 V 120 V
Configuration - COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE) - 200 200 200 350 350
JESD-30 code - R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
Number of components - 2 2 2 2 2
Number of terminals - 5 5 5 5 5
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - NPN NPN NPN NPN NPN
Maximum power consumption environment - 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
Maximum power dissipation(Abs) - 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
Certification status - Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL DUAL
transistor applications - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max - 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
Can the ActiveX control developed under VC be embedded in wince for use?
Can the ActiveX control developed under VC be embedded in wince for use?...
kangtc86 Embedded System
MMC and MSP430 interface
[b]Multi Media Card (MMC card for short),[/b]The MMCA Association established in 1998 promoted the MMC specification. MMC card is a small memory card designed for mobile phones, digital audio and vide...
qinkaiabc Microcontroller MCU
Frequency converter control program development
This is my first time to develop a control program for a frequency converter. As a project manager, if anyone has information, solutions or programs in this area, please give me points if they can hel...
zhangjingrui Embedded System
The differences between the road voltage method, dynamic voltage method, and CEDV compensated discharge termination voltage method, as well as the specific measurement principles
1. Current integration method/Coulomb counter 2.OCV open circuit voltage method 3. Kalman filter method 4. Neural Network Method 5. Impedance TrackTM 6. Dynamic voltage method 7.CEDV Compensated disch...
QWE4562009 Discrete Device
Online help
The sizeof of all types of ADI sharc DSP is 1. If the data structure is designed for communication with ARM, the sizeof structure will be different from what the other party receives....
georon ADI Reference Circuit
What should be the low power consumption index of 51 single chip microcomputer?
Are the specifications of the technical parameters accurate?...
wenshow 51mcu

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 13  2226  1641  1545  747  1  45  34  32  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号