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HN4C06JBL

Description
TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size338KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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HN4C06JBL Overview

TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

HN4C06JBL Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage120 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)350
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.3 W
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
HN4C06J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C06J
Audio Frequency General Purpose Amplifier Applications
High voltage : V
CEO
= 120V
High h
FE
: h
FE
= 200 to 700
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Low noise : NF = 1dB(typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
120
120
5
100
20
300
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3L1A
temperature/current/voltage and the significant change in
Weight: 0.014g(Typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
NF
Test
Circuit
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 6V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
=
6 V, I
C
=
0.1 mA
f
=
1 kHz, R
G
=
10 kΩ
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
Classification
GR(G): 200 to 400, BL (L): 350 to 700
(
) Marking Symbol.
Marking
Type Name
hFE Rank
Equivalent Circuit
(Top View)
5
4
Q1
Q2
DG
Start of commercial production
1
2
3
2000-03
1
2014-03-01

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Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G5 - SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Contacts 5 - 5 - 5 5
Reach Compliance Code unknown - unknown unknown unknown unknown
Other features LOW NOISE - LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 120 V - 120 V 120 V 120 V 120 V
Configuration COMMON EMITTER, 2 ELEMENTS - COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE) 350 - 200 200 200 350
JESD-30 code R-PDSO-G5 - R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
Number of components 2 - 2 2 2 2
Number of terminals 5 - 5 5 5 5
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN - NPN NPN NPN NPN
Maximum power consumption environment 0.3 W - 0.3 W 0.3 W 0.3 W 0.3 W
Maximum power dissipation(Abs) 0.3 W - 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified - Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz - 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.3 V - 0.3 V 0.3 V 0.3 V 0.3 V
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