RN1110,RN1111
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1110, RN1111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
•
•
•
•
With built-in bias resistors
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2110 and RN2111
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
5
100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
SSM
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1990-12
1
2014-03-01
RN1110,RN1111
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1110
RN1111
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
―
―
―
―
―
―
―
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 1 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MH
z
―
Min
―
―
120
―
―
―
3.29
7
Typ.
―
―
―
0.1
250
3
4.7
10
Max
0.1
0.1
700
0.3
―
6
6.11
13
Unit
μA
μA
―
V
MHz
pF
kΩ
2
2014-03-01
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