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HDBL106G C1G

Description
BRIDGE RECT 1PHASE 800V 1A DBL
Categorysemiconductor    Discrete semiconductor   
File Size365KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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HDBL106G C1G Overview

BRIDGE RECT 1PHASE 800V 1A DBL

HDBL106G C1G Parametric

Parameter NameAttribute value
Diode typeSimplex
technologystandard
Voltage - Peak Reverse (Maximum)800V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.7V @ 1A
Current at different Vr - Reverse leakage current5µA @ 800V
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casing4-DIP(0.300",7.62mm)
Supplier device packagingDBL
HDBL101G - HDBL107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBL
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Notes 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
t
rr
R
θJL
R
θJA
T
J
T
STG
50
15
40
- 55 to + 150
- 55 to + 150
1.0
HDBL
101G
50
35
50
HDBL
102G
100
70
100
HDBL
103G
200
140
200
HDBL
104G
400
280
400
1
50
10.3
1.3
5
500
75
1.7
HDBL
105G
600
420
600
HDBL
106G
800
560
800
HDBL
107G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
ns
°C/W
°C
°C
Document Number: DS_D1311010
Version: F15

HDBL106G C1G Related Products

HDBL106G C1G HDBL102G C1G HDBL103G C1G HDBL104G C1G HDBL105G C1G HDBL107G C1G HDBL105GHC1G
Description BRIDGE RECT 1PHASE 800V 1A DBL BRIDGE RECT 1PHASE 100V 1A DBL BRIDGE RECT 1PHASE 200V 1A DBL BRIDGE RECT 1PHASE 400V 1A DBL BRIDGE RECT 1PHASE 600V 1A DBL BRIDGE RECT 1PHASE 1KV 1A DBL Bridge Rectifier Diode,
Diode type Simplex Simplex Simplex Simplex Simplex Simplex BRIDGE RECTIFIER DIODE
technology standard standard standard standard standard standard -
Voltage - Peak Reverse (Maximum) 800V 100V 200V 400V 600V 1kV -
Current - average rectification (Io) 1A 1A 1A 1A 1A 1A -
Voltage at different If - Forward (Vf 1.7V @ 1A 1V @ 1A 1V @ 1A 1.3V @ 1A 1.7V @ 1A 1.7V @ 1A -
Current at different Vr - Reverse leakage current 5µA @ 800V 5µA @ 100V 5µA @ 200V 5µA @ 400V 5µA @ 600V 5µA @ 1000V -
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -
Installation type Through hole Through hole Through hole Through hole Through hole Through hole -
Package/casing 4-DIP(0.300",7.62mm) 4-DIP(0.300",7.62mm) 4-DIP(0.300",7.62mm) 4-DIP(0.300",7.62mm) 4-DIP(0.300",7.62mm) 4-DIP(0.300",7.62mm) -
Supplier device packaging DBL DBL DBL DBL DBL DBL -

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