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BUK9M17-30EX

Description
MOSFET N-CH 30V 37A LFPAK
CategoryDiscrete semiconductor    The transistor   
File Size716KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK9M17-30EX Overview

MOSFET N-CH 30V 37A LFPAK

BUK9M17-30EX Parametric

Parameter NameAttribute value
Brand NameNexperia
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts8
Manufacturer packaging codeSOT1210
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)13.7 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)37 A
Maximum drain-source on-resistance0.017 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)148 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9M17-30E
19 September 2016
N-channel 30 V, 17 mΩ logic level MOSFET in LFPAK33
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
30
37
44
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
14
17
Dynamic characteristics
Q
GD
I
D
= 10 A; V
DS
= 24 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
3.7
-
nC

BUK9M17-30EX Related Products

BUK9M17-30EX 934070077115
Description MOSFET N-CH 30V 37A LFPAK MOSFET N-CH 30V 37A LFPAK
Reach Compliance Code compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 13.7 mJ 13.7 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 37 A 37 A
Maximum drain-source on-resistance 0.017 Ω 0.017 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 148 A 148 A
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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