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DF650R17IE4BOSA1

Description
MOD IGBT 650A PRIME2-1
CategoryDiscrete semiconductor    The transistor   
File Size2MB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DF650R17IE4BOSA1 Overview

MOD IGBT 650A PRIME2-1

DF650R17IE4BOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X10
Contacts10
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionISOLATED
Maximum collector current (IC)930 A
Collector-emitter maximum voltage1700 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X10
Number of components1
Number of terminals10
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1870 ns
Nominal on time (ton)720 ns
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
PrimePACK™2ModulundNTC
PrimePACK™2moduleandNTC
VorläufigeDaten/PreliminaryData
DF650R17IE4
V
CES
= 1700V
I
C nom
= 650A / I
CRM
= 1300A
TypischeAnwendungen
• 3-Level-Applikationen
• Chopper-Anwendungen
• Hochleistungsumrichter
• Windgeneratoren
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturT
vjop
• GroßeDC-Festigkeit
• HoheStromdichte
• NiedrigeSchaltverluste
• T
vjop
=150°C
• NiedrigesV
CEsat
MechanischeEigenschaften
• GehäusemitCTI>400
• GroßeLuft-undKriechstrecken
• HoheLast-undthermischeWechselfestigkeit
• HoheLeistungsdichte
• Kupferbodenplatte
• Standardgehäuse
TypicalApplications
• 3-Level-Applications
• ChopperApplications
• HighPowerConverters
• WindTurbines
ElectricalFeatures
• ExtendedOperationTemperatureT
vjop
• HighDCStability
• HighCurrentDensity
• LowSwitchingLosses
• T
vjop
=150°C
• LowV
CEsat
MechanicalFeatures
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• CopperBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-05
revision:2.2
1
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:RH
approvedby:MS

DF650R17IE4BOSA1 Related Products

DF650R17IE4BOSA1 DF650R17IE4
Description MOD IGBT 650A PRIME2-1 Thermal Interface Products Soft PGS - IGBT Mod Infineon
Is it lead-free? Contains lead Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X10 FLANGE MOUNT, R-XUFM-X10
Contacts 10 10
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 930 A 930 A
Collector-emitter maximum voltage 1700 V 1700 V
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR SINGLE WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X10 R-XUFM-X10
Number of components 1 1
Number of terminals 10 10
Maximum operating temperature 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 1870 ns 1870 ns
Nominal on time (ton) 720 ns 720 ns
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