Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
D
= Rated V
DRM
and V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2) (I
TM
= 24 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V; R
L
= 100
W)
Holding Current (V
D
= 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (V
D
= 12 V, I
G
= 20 mA)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V; R
L
=100
W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Repetitive Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40
msec,
diG/dt = 1 A/msec, Igt = 50 mA
dv/dt
di/dt
100
−
250
−
−
50
V/ms
A/ms
V
TM
I
GT
I
H
I
L
V
GT
−
2.0
4.0
6.0
0.5
−
8.0
20
25
0.65
2.2
20
40
60
1.0
V
mA
mA
mA
V
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width
v
2.0 ms, Duty Cycle
v
2%.
Voltage Current Characteristic of SCR
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
+ Current
Anode +
V
TM
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
I
RRM
at V
RRM
on state
I
H
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
125
TC , CASE TEMPERATURE (
°
C)
120
115
110
105
100
95
30°
90
0
1
6
7 8
9 10 11
3
4 5
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
2
12
60°
90°
180°
dc
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
20
18
16
14
12
10
8
6
4
2
0
0
6
7
1
2
4
5
3
8
9 10 11 12
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
30°
90°
180°
dc
Figure 1. Typical RMS Current Derating
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2
Figure 2. On−State Power Dissipation
MCR12DG, MCR12MG, MCR12NG
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
MAXIMUM @ T
J
= 25°C
GATE TRIGGER CURRENT (mA)
MAXIMUM @ T
J
= 125°C
10
20
18
16
14
12
10
8
6
4
2
0.1
0.5
1.0
1.5
2.0
2.5
3.0
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
0
−40 −25 −10
5
20
35
50
65
80
95 110 125
1
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Typical On−State Characteristics
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
100
VGT, GATE TRIGGER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
5
−40 −25 −10
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
IH, HOLDING CURRENT (mA)
10
1
−40 −25 −10
20 35 50 65 80 95 110 125
5
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
100
IL , LATCHING CURRENT (mA)
10
1
−40 −25 −10
5
20
35
50
65
80
95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Latching Current versus
Junction Temperature
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3
MCR12DG, MCR12MG, MCR12NG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and the
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