Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
D
= Rated V
DRM
and V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2) (I
TM
= 24 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V; R
L
= 100
W)
Holding Current (V
D
= 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (V
D
= 12 V, I
G
= 20 mA)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V; R
L
=100
W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Repetitive Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40
msec,
diG/dt = 1 A/msec, Igt = 50 mA
dv/dt
di/dt
100
−
250
−
−
50
V/ms
A/ms
V
TM
I
GT
I
H
I
L
V
GT
−
2.0
4.0
6.0
0.5
−
8.0
20
25
0.65
2.2
20
40
60
1.0
V
mA
mA
mA
V
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width
v
2.0 ms, Duty Cycle
v
2%.
Voltage Current Characteristic of SCR
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
+ Current
Anode +
V
TM
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
I
RRM
at V
RRM
on state
I
H
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
125
TC , CASE TEMPERATURE (
°
C)
120
115
110
105
100
95
30°
90
0
1
6
7 8
9 10 11
3
4 5
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
2
12
60°
90°
180°
dc
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
20
18
16
14
12
10
8
6
4
2
0
0
6
7
1
2
4
5
3
8
9 10 11 12
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
30°
90°
180°
dc
Figure 1. Typical RMS Current Derating
www.onsemi.com
2
Figure 2. On−State Power Dissipation
MCR12DG, MCR12MG, MCR12NG
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
MAXIMUM @ T
J
= 25°C
GATE TRIGGER CURRENT (mA)
MAXIMUM @ T
J
= 125°C
10
20
18
16
14
12
10
8
6
4
2
0.1
0.5
1.0
1.5
2.0
2.5
3.0
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
0
−40 −25 −10
5
20
35
50
65
80
95 110 125
1
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Typical On−State Characteristics
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
100
VGT, GATE TRIGGER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
5
−40 −25 −10
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
IH, HOLDING CURRENT (mA)
10
1
−40 −25 −10
20 35 50 65 80 95 110 125
5
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
100
IL , LATCHING CURRENT (mA)
10
1
−40 −25 −10
5
20
35
50
65
80
95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Latching Current versus
Junction Temperature
www.onsemi.com
3
MCR12DG, MCR12MG, MCR12NG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
The situation is like this: I wrote an application using the WM6.0 simulator, and it ran fine on the simulator and on a WM phone. Later, I wanted to run the program in a CE6.0 environment, so I re-deb...
Why does the "Welcome to the Found New Hardware Wizard" pop up every time I start the system? Gigabyte's motherboard sound card and graphics card are all integrated. In the device manager, I found tha...
The initial value of rgb2 is all '1'. The LCD resolution is 1280X800. [b][size=6] The bottom square should actually be merged with the top one. The horizontal and vertical grid ratio is 16:10, and eac...
First of all, I am a novice and just started to use DSP. Today, I encountered a problem when testing a simple LED flashing program with TMS320F2812. When I wrote 0~4 to the PLLCR register, the program...
[img]http://pic.yupoo.com/pole625/81380599a8bf/ia6exy6r.jpg[/img] This is the waveform under the simulator, using the standard SDK for WinCE5.0. But when the program is loaded on wince, it becomes a d...
1. Overview
Will passive devices
produce nonlinear intermodulation distortion? The answer is yes! Although there is no systematic theoretical analysis, it has been found in engineerin...[Details]
In this article, the high-performance DSP developed by TI can be used as an effective confidentiality method if it is applied to PC encryption cards.
As an effective network security solution,...[Details]
Abstract: In order to generate a stable excitation signal, the design of a digital frequency synthesizer is implemented on FPGA using Verilog hardware language. The design includes accumulator, wav...[Details]
AD8205 is
a single-supply high-performance differential
amplifier
launched by
Analog
Devices of the United States
. The typical single-supply voltage is 5V, and its common-mode volta...[Details]
Contact resistance
is the resistance to current flow through a closed pair of contacts. This type of measurement is performed on devices such as connectors,
relays
, and switches. The...[Details]
1 Introduction to HART Protocol
HART (Highway Addressable Remote Transducer), an open communication protocol for addressable remote sensor high-speed channels, was launched by Rosemen in the U...[Details]
LED lamps and bulbs are now rapidly replacing incandescent, halogen and CFL (compact fluorescent lamp) light sources in many general lighting applications. Flyback DC/DC converters are the power su...[Details]
This controller uses PIC16C54 single-chip microcomputer as the controller, and it is very easy to use: just connect a telephone line to the loudspeaker through the controller, and you can rem...[Details]
Abstract: With the development and construction of BeiDou II system, China will shift from the situation dominated by GPS to the situation dominated by BeiDou II global navigation system independen...[Details]
At present, how various communication technologies will evolve after 3G is a focus of great concern in the industry. Especially for TD-SCDMA, whether it can achieve smooth evolution to the next gen...[Details]
Our flight had just begun to descend when a gentleman sitting next to me turned to talk to me about engineering—he had seen me reading an engineering journal. The gentleman next to me said that he ...[Details]
1. The composition and structure of mobile phone lithium battery
Mobile phone lithium batteries are mainly composed of plastic shell upper and lower covers, lithium battery cells, protection c...[Details]
In order to prevent the lithium battery from being damaged by abnormal conditions such as overcharge, over discharge, and overcurrent, a lithium battery protection device is usually used to prevent...[Details]
Don’t just look at the power when choosing a power supply
We know that a power supply with a low rated power can hardly meet the power supply needs of the system, which may cause frequent free...[Details]
If users want to extend the effective use time of the battery, in addition to ensuring the quality of the charger, correct charging techniques are also essential. Here are 14 tips for charging mobile ...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
