1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
•
Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
Case Style 1.5KE
• AEC-Q101 qualified
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
V
WM
uni-directional
V
WM
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.8 V to 540 V
6.8 V to 440 V
5.8 V to 459 V
5.8 V to 376 V
1500 W
6.5 W
200 A
175 °C
Uni-directional, bi-directional
1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3_X - RoHS compliant, and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
•
1.5KE250A to 1.5KE540A and 1.5KE250CA to 1.5KE440CA for
commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use CA suffix (e.g. 1.5KE440CA)
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 100 A for uni-directional only
(3)
Operating junction and storage temperature range
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
1500
See next table
6.5
200
3.5/5.0
-55 to +175
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for 1.5KE220A and below; V = 5.0 V for 1.5KE250A and above
F
F
Revision: 11-Oct-16
Document Number: 88301
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
MAXIMUM MAXIMUM
MAXIMUM
PEAK
CLAMPING TEMPERATURE
PULSE
VOLTAGE
COEFFICENT
CURRENT
AT I
PPM
OF V
BR
(2)
I
PPM
V
C
(V)
(%/°C)
(A)
143
10.5
0.057
133
11.3
0.061
124
12.1
0.065
112
13.4
0.068
103
14.5
0.073
96.2
15.6
0.075
89.8
16.7
0.078
82.4
18.2
0.081
70.8
21.2
0.084
66.7
22.5
0.086
59.5
25.2
0.089
54.2
27.7
0.090
49.0
30.6
0.092
45.2
33.2
0.094
40.0
37.5
0.096
36.2
41.4
0.097
32.8
45.7
0.098
30.1
49.9
0.099
27.8
53.9
0.100
25.3
59.3
0.101
23.1
64.8
0.101
21.4
70.1
0.102
19.5
77.0
0.103
17.6
85.0
0.104
16.3
92.0
0.104
14.6
104
0.105
13.3
113
0.105
12.0
125
0.106
10.9
137
0.106
9.9
152
0.107
9.1
165
0.107
8.4
179
0.107
7.2
207
0.106
6.8
219
0.108
6.4
234
0.108
6.1
246
0.108
5.5
274
0.108
4.6
328
0.108
4.4
344
0.110
3.6
414
0.110
3.1
482
0.110
2.7
548
0.110
2.5
602
0.110
2.28
658
0.110
2.15
698
0.110
2.03
740
0.110
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
JEDEC
®
TYPE
NUMBER
1N6267A
1N6268A
1N6269A
1N6270A
1N6271A
1N6272A
1N6273A
1N6274A
1N6275A
1N6276A
1N6277A
1N6278A
1N6279A
1N6280A
1N6281A
1N6282A
1N6283A
1N6284A
1N6285A
1N6286A
1N6287A
1N6288A
1N6289A
1N6290A
1N6291A
1N6292A
1N6293A
1N6294A
1N6295A
1N6296A
1N6297A
1N6298A
1N6299A
1N6300A
1N6301A
1N6302A
1N6303A
-
-
-
-
-
-
-
-
-
BREAKDOWN
MAXIMUM
VOLTAGE
TEST
STAND-OFF REVERSE
GENERAL
V
BR
AT I
T (1)
CURRENT VOLTAGE
LEAKAGE
SEMICONDUCTOR
(V)
I
T
V
WM
AT V
WM
PART NUMBER
(mA)
(V)
I
D (4)
MIN. MAX.
(μA)
(+)
1.5KE6.8A
6.45
7.14
10
5.80
1000
(+)
1.5KE7.5A
7.13
7.88
10
6.40
500
(+)
1.5KE8.2A
7.79
8.61
10
7.02
200
(+)
1.5KE9.1A
8.65
9.55
1.0
7.78
50
(+)
1.5KE10A
9.50
10.5
1.0
8.55
10
(+)
1.5KE11A
10.5
11.6
1.0
9.40
5.0
(+)
1.5KE12A
11.4
12.6
1.0
10.2
5.0
(+)
1.5KE13A
12.4
13.7
1.0
11.1
5.0
(+)
1.5KE15A
14.3
15.8
1.0
12.8
1.0
(+)
1.5KE16A
15.2
16.8
1.0
13.6
1.0
(+)
1.5KE18A
17.1
18.9
1.0
15.3
1.0
(+)
1.5KE20A
19.0
21.0
1.0
17.1
1.0
(+)
1.5KE22A
20.9
23.1
1.0
18.8
1.0
(+)
1.5KE24A
22.8
25.2
1.0
20.5
1.0
(+)
1.5KE27A
25.7
28.4
1.0
23.1
1.0
(+)
1.5KE30A
28.5
31.5
1.0
25.6
1.0
(+)
1.5KE33A
31.4
34.7
1.0
28.2
1.0
(+)
1.5KE36A
34.2
37.8
1.0
30.8
1.0
(+)
1.5KE39A
37.1
41.0
1.0
33.3
1.0
(+)
1.5KE43A
40.9
45.2
1.0
36.8
1.0
(+)
1.5KE47A
44.7
49.4
1.0
40.2
1.0
(+)
1.5KE51A
48.5
53.6
1.0
43.6
1.0
(+)
1.5KE56A
53.2
58.8
1.0
47.8
1.0
(+)
1.5KE62A
58.9
65.1
1.0
53.0
1.0
(+)
1.5KE68A
64.6
71.4
1.0
58.1
1.0
(+)
1.5KE75A
71.3
78.8
1.0
64.1
1.0
(+)
1.5KE82A
77.9
86.1
1.0
70.1
1.0
(+)
1.5KE91A
86.5
95.5
1.0
77.8
1.0
(+)
1.5KE100A
95.0
105
1.0
85.5
1.0
(+)
1.5KE110A
105
116
1.0
94.0
1.0
(+)
1.5KE120A
114
126
1.0
102
1.0
(+)
1.5KE130A
124
137
1.0
111
1.0
(+)
1.5KE150A
143
158
1.0
128
1.0
(+)
1.5KE160A
152
168
1.0
136
1.0
(+)
1.5KE170A
162
179
1.0
145
1.0
(+)
1.5KE180A
171
189
1.0
154
1.0
(+)
1.5KE200A
190
210
1.0
171
1.0
(+)
1.5KE220A
209
231
1.0
185
1.0
1.5KE250A
237
263
1.0
214
1.0
1.5KE300A
285
315
1.0
256
1.0
1.5KE350A
333
368
1.0
300
1.0
1.5KE400A
380
420
1.0
342
1.0
1.5KE440A
418
462
1.0
376
1.0
1.5KE480A
456
504
1.0
408
1.0
1.5KE510A
485
535
1.0
434
1.0
1.5KE540A
513
567
1.0
459
1.0
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge
current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE CA62.35
(4)
For bi-directional types with V 10 V and less the I limit is doubled
R
D
(+)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 11-Oct-16
Document Number: 88301
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
SYMBOL
R
JA
R
JL
VALUE
75
15.4
UNIT
°C/ W
ORDERING INFORMATION
(Example)
PREFERRED PIN
1.5KE6.8A-E3/54
1.5KE6.8AHE3_A/C
(1)(2)
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
0.968
0.968
54
C
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Notes
(1)
AEC-Q101 qualified
(2)
Applied for 1.5KE6.8AHE3_A to 1.5KE220AHE3_A, and 1.5KE6.8CAHE3_A to 1.5KE220CAHE3_A
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10 µs
Peak
Value
I
PPM
10
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
100
Half
Value
- I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
10 000
Uni-Directional
Bi-Directional
C
J
- Capacitance (pF)
75
V
R
= 0
1000
50
100
V
R
= Rated
Stand-Off
Voltage
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
25
0
0
25
50
75
100
125
150
175
200
10
5
10
100
500
T
J
- Initial Temperature (°C)
V
BR
- Breakdown
Voltage
(V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 11-Oct-16
Document Number: 88301
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
100
8.0
ΔV
C
- Incremental Clamping
Voltage
7.0
P
D
- Power Dissipation (W)
Waveform:
10/1000 µs Impulse
ΔV
C
=
V
C
-
V
BR
1.5KE200
1.5KE130
1.5KE75
6.0
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
150
175
200
L = 0.375" (9.5 mm)
Lead Lengths
20
10
1.5KE39
2.0
1.0
1.5KE33
1.5KE6.8
1.5KE9.1
0.2
0.1
0.5
1
2
10
50
T
L
- Lead Temperature (°C)
I
PP
- Peak Pulse Current (A)
Fig. 5 - Power Derating Curve
Fig. 8 - Incremental Clamping Voltage Curve (Uni-directional)
200
100
ΔV
C
- Incremental Clamping
Voltage
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
Waveform:
10/1000 µs Impulse
ΔV
C
=
V
C
-
V
BR
20
10
1.5KE200C
1.5KE75C
2.0
1.0
1.5KE39C
1.5KE30C
1.5KE15C
11C
1.5KE7.5C
0.2
0.1
0.5
1
2
10
20
50
10
1
10
100
Number
of Cycles at 60 Hz
I
PP
- Peak Pulse Current (A)
Fig. 6 -
Maximum Non-Repetitive Forward Surge Current
Uni-Directional only
Fig. 9 -
Incremental Clamping Voltage Curve (Bi-directional)
100
100
1.5KE200
1.5KE130
1.5KE100
1.5KE75
ΔV
C
- Incremental Clamping
Voltage
ΔV
C
- Incremental Clamping
Voltage
Waveform:
8/20
µs Impulse
ΔV
C
=
V
C
-
V
BR
20
10
20
10
Waveform:
8/20
µs Impulse
ΔV
C
=
V
C
-
V
BR
1.5KE200C
1.5KE75C
1.5KE39C
1.5KE30C
1.5KE15C
1.5KE11C
1.5KE7.5C
2.0
1.0
1.5KE39
1.5KE33
1.5KE6.8
1.5KE9.1
1.5KE18
1.5KE12
2
1
0.2
0.1
0.5
1
2
10
20
50
0.2
0.1
0.5
1
2.0
10
20
50
I
PP
- Peak Pulse Current (A)
I
PP
- Peak Pulse Current (A)
Fig. 7 -
Incremental Clamping Voltage Curve (Uni-Directional)
Fig. 10 -
Incremental Clamping Voltage Curve (Bi-Directional)
Revision: 11-Oct-16
Document Number: 88301
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A
www.vishay.com
Vishay General Semiconductor
100
100
10
Transient Thermal Impedance (°C/W)
2.0
Instantaneous Forward Current (A)
10
1
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0
0.4
0.8
1.2
1.6
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous Forward
Voltage
(V)
t
p
- Pulse Duration (s)
Fig. 11 -
Instantaneous Forward Voltage Characteristics Curve
Fig. 12 -
Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case
Style
1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
APPLICATION NOTES
• This series of Silicon Transient Suppressors is used in
applications where large voltage transients can
permanently damage voltage-sensitive components.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
• This Transient Voltage Suppressor diode has a pulse
power rating of 1500 W for 1 ms. The response time of
TVS diode clamping action is effectively instantaneous
(1 x 10
-9
s bi-directional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and other
voltage sensitive semiconductors and components. TVS
diodes can also be used in series or parallel to increase
the peak power ratings.
Revision: 11-Oct-16
Document Number: 88301
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Embedded System
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