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CPMF-1200-S160B

Description
MOSFET N-CHANNEL 1200V 28A DIE
Categorysemiconductor    Discrete semiconductor   
File Size448KB,10 Pages
ManufacturerPulseLarsen Antennas
Environmental Compliance
Download Datasheet Parametric View All

CPMF-1200-S160B Overview

MOSFET N-CHANNEL 1200V 28A DIE

CPMF-1200-S160B Parametric

Parameter NameAttribute value
FET typeN channel
technologySiCFET (silicon carbide)
Drain-source voltage (Vdss)1200V
Current - Continuous Drain (Id) at 25°C28A(Tj)
Drive voltage (maximum Rds On, minimum Rds On)20V
Rds On (maximum value) when different Id, Vgs220 milliohms @ 10A, 20V
Vgs (th) (maximum value) when different Id4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)47.1nC @ 20V
Vgs (maximum value)+25V,-5V
Input capacitance (Ciss) at different Vds (maximum value)928pF @ 800V
FET function-
Power dissipation (maximum)202W(Tj)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingMold
Package/casingMold
CPMF-1200-S160B
Z-F
eT
TM
Silicon Carbide
N-Channel Enhancement Mode
Bare Die
Features
MOSFET
Package
V
DS
R
DS(on)
Q
g
= 1200 V
= 160 mΩ
= 47 nC
Industry Leading R
DS(on)
High Speed Switching
Low Capacitances
Easy to Parallel
Simple to Drive
Lead-Free
D
D
Gate
Source
Source
G
G
Benefits
DIE
S
S
Higher System Efficiency
Reduced Cooling Requirements
Avalanche Ruggedness
Increase System Switching Frequency
Part Number
CPMF-1200-S160B
Package
DIE
Applications
Solar Inverters
Motor Drives
Military and Aerospace
Maximum Ratings
Symbol
Parameter
Continuous Drain Current
Value
28
18
54
500
400
10
-5/+25
202
-55 to
+150
260
Unit
A
Test Conditions
V
GS
@20V, T
J
= 25˚C
V
GS
@20V, T
J
= 100˚C
Note
1
I
D
I
Dpulse
E
AS
E
AR
I
AR
V
GS
P
tot
T
J
, T
stg
T
L
Pulsed Drain Current
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
Gate Source Voltage
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
A
mJ
mJ
A
V
W
˚C
˚C
Pulse width t
P
limited by T
jmax
T
j
= 25˚C, tp = 1ms
I
D
= 10A, V
DD
= 50 V,
L = 9.5 mH
t
AR
limited by T
jmax
I
D
= 10A, V
DD
= 50 V, L = 3 mH
t
AR
limited by T
jmax
1
T
J
=25˚C
1
1.6mm (0.063”) from case for 10s
Note:
1.
Assumes a thermal resistance junction to case of ≤ 0.62
°C/W.
1
CPMF-1200-S160B Rev. A
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