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MT28FW02GBBA1HPC-0AAT

Description
IC FLASH 2G PARALLEL 64LBGA
Categorystorage    storage   
File Size879KB,75 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT28FW02GBBA1HPC-0AAT Overview

IC FLASH 2G PARALLEL 64LBGA

MT28FW02GBBA1HPC-0AAT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionLBGA,
Reach Compliance Codecompliant
Factory Lead Time3 weeks
Maximum access time105 ns
JESD-30 codeR-PBGA-B64
length13 mm
memory density2147483648 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals64
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Filter levelAEC-Q100
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width11 mm
2Gb: x16, 3V, MT28FW, Automotive Parallel NOR
Features
Parallel NOR Flash Automotive Memory
MT28FW02GBBA1HPC-0AAT, MT28FW02GBBA1LPC-0AAT
Features
• 2Gb stacked device (Two 1Gb die)
• Single-level cell (SLC) process technology
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–V
CC
(I/O buffers)
• Asynchronous random/page read
– Page size: 16 words
– Page access: 20ns (V
CC
= V
CCQ
= 2.7–3.6V)
– Random access: 105ns (V
CC
= V
CCQ
= 2.7–3.6V)
– Random access: 110ns (V
CCQ
= 1.65–V
CC
)
• Buffer program (512-word program buffer)
– 2.0 MB/s (TYP) when using full buffer program
– 2.5 MB/s (TYP) when using accelerated buffer
program (V
HH
)
• Word program: 25µs per word (TYP)
• Block erase (128KB): 0.2s (TYP)
• Memory organization
– Uniform blocks: 128KB or 64KW each
– x16 data bus
• Program/erase suspend and resume capability
– Read from another block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, die erase, and write to
buffer capability
• BLANK CHECK operation to verify an erased block
• CYCLIC REDUNDANCY CHECK (CRC) operation to
verify a program pattern
• V
PP
/WP# protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 512-word block for permanent, secure identifica-
tion
– Programmed or locked at the factory or by the
customer
• JESD47-compliant
– 100,000 (minimum) ERASE cycles per block
– Data retention: 20 years (TYP)
• Package
– 64-ball LBGA, 11mm x 13mm (PC)
• RoHS-compliant, halogen-free packaging
• Automotive operating temperature
– Ambient: –40°C to 105°C
CCMTD-1718347970-10367
mt28fw_2gb_automotive.pdf - Rev. F 10/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

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