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FDMC6675BZ P-Channel PowerTrench
®
MOSFET
FDMC6675BZ
P-Channel PowerTrench
®
MOSFET
-30 V, -20 A, 14.4 mΩ
Features
Max r
DS(on)
= 14.4 mΩ at V
GS
= -10 V, I
D
= -9.5 A
Max r
DS(on)
= 27.0 mΩ at V
GS
= -4.5 V, I
D
= -6.9 A
HBM ESD protection level of 8 kV typical(note 3)
Extended V
GSS
range (-25 V) for battery applications
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
June 2014
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
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