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will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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FDMC6675BZ P-Channel PowerTrench
®
MOSFET
FDMC6675BZ
P-Channel PowerTrench
®
MOSFET
-30 V, -20 A, 14.4 mΩ
Features
Max r
DS(on)
= 14.4 mΩ at V
GS
= -10 V, I
D
= -9.5 A
Max r
DS(on)
= 27.0 mΩ at V
GS
= -4.5 V, I
D
= -6.9 A
HBM ESD protection level of 8 kV typical(note 3)
Extended V
GSS
range (-25 V) for battery applications
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
June 2014
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
2812 eCAN module ECanaMboxes.MBOX5.MDRL.all = 0x01234567; ECanaMboxes.MBOX5.MDRH.all = 0x89ABCDEF; Send data through mailbox No. 5 I now want to use mailbox No. 5 to send some random arrays. How to wr...
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stm32/stm8
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