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1A1

Description
1 A, 50 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size45KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

1A1 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

1A1 Parametric

Parameter NameAttribute value
MakerLRC
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
LESHAN RADIO COMPANY, LTD.
1A1– 1A7
1A
1A GENERAL DIODES
Maximum Average
Rectified Current
@ Half-Wave
Resistive Load 60Hz
I
O
@ T
L
A
AV
ºC
Maximum
Forward Peak
Surge Current @
8.3ms Superimposed
I
FM
(Surge)
A
PK
Maximum
Reverse
Current @ PRV
@ T
A
=25ºC
I
R
TYPE
Maximum
Peak Reverse
Voltage
PRV
V
PK
Maximum
Forward
Voltage
@ T
A
=25ºC
I
FM
A
PK
V
FM
V
PK
Package
Dimensions
µAdc
1A1
1A2
1A3
1A4
1A5
1A6
1A7
50
100
200
400
600
800
1000
1.0
25
25
5.0
1.0
1.1
R–1
.787(20.0)
MIN
.126(3.2)
.106(2.7)
.787(20.0)
MIN
.025(0.65) DIA
.021(0.55)
.102(2.6) DIA
.091(2.3)
R–1
21A–1/2

1A1 Related Products

1A1 1A2 1A3 1A4 1A5 1A6 1A7
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE SIGNAL DIODE
Maker LRC LRC LRC LRC LRC - LRC
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 - O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown - unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V - 1.1 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 - O-PALF-W2
Maximum non-repetitive peak forward current 25 A 25 A 25 A 25 A 25 A - 25 A
Number of components 1 1 1 1 1 - 1
Number of terminals 2 2 2 2 2 - 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C - 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C - -50 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A - 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND - ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM
Maximum repetitive peak reverse voltage 50 V 100 V 200 V 400 V 600 V - 1000 V
surface mount NO NO NO NO NO - NO
Terminal form WIRE WIRE WIRE WIRE WIRE - WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL - AXIAL
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