1A3 datasheet, PDF - EEWORLD Datasheet

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1A3: Description1 A, 200 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size45KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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1A3 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1A3 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	25 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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LESHAN RADIO COMPANY, LTD.

1A1– 1A7

1A GENERAL DIODES

Maximum Average

Rectified Current

@ Half-Wave

Resistive Load 60Hz

@ T

ºC

Maximum

Forward Peak

Surge Current @

8.3ms Superimposed

(Surge)

Maximum

Reverse

Current @ PRV

@ T

=25ºC

TYPE

Maximum

Peak Reverse

Voltage

PRV

Maximum

Forward

Voltage

@ T

=25ºC

Package

Dimensions

µAdc

1A1

1A2

1A3

1A4

1A5

1A6

1A7

100

200

400

600

800

1000

1.0

5.0

1.0

1.1

R–1

.787(20.0)

MIN

.126(3.2)

.106(2.7)

.787(20.0)

MIN

.025(0.65) DIA

.021(0.55)

.102(2.6) DIA

.091(2.3)

R–1

21A–1/2

1A3 Related Products

	1A3	1A1	1A2	1A4	1A5	1A6	1A7
Description	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE	SIGNAL DIODE
Maker	LRC	LRC	LRC	LRC	LRC	-	LRC
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	-	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	-	1.1 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	O-PALF-W2
Maximum non-repetitive peak forward current	25 A	25 A	25 A	25 A	25 A	-	25 A
Number of components	1	1	1	1	1	-	1
Number of terminals	2	2	2	2	2	-	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	-	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-	-50 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	-	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	-	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM
Maximum repetitive peak reverse voltage	200 V	50 V	100 V	400 V	600 V	-	1000 V
surface mount	NO	NO	NO	NO	NO	-	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	-	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-	AXIAL

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