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JANTX1N5553US

Description
D MET 3A STD 800V HR SM
CategoryDiscrete semiconductor    diode   
File Size122KB,4 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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JANTX1N5553US Overview

D MET 3A STD 800V HR SM

JANTX1N5553US Parametric

Parameter NameAttribute value
MakerSEMTECH
package instructionGLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknown
Is SamacsysN
applicationPOWER
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusQualified
GuidelineMIL-19500/420G
Maximum repetitive peak reverse voltage800 V
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
1N5550US THRU 1N5554US
Surface Mount Hermetically Sealed
Standard Recovery Rectifier Diode
POWER DISCRETES
Description
Quick reference data
V
R
= 200 - 1000V
I
F =
5.0A
t
rr
= 2µS
V
F
= 1.0V
Features
Low reverse leakage current
Hermetically sealed in fused metal oxide
Good thermal shock resistance
Low forward voltage drop
Avalanche capability
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
and JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Symbol
Working Reverse Voltage
Average Forward Current
@ 55 °C in free air, lead length
0.375"
Repetitive Surge Current
@ 55 °C in free air, lead length
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V
R
& T
JMAX
)
(tp = 8.3mS, @ V
R
& 25 °C)
Storage Temperature Range
V
RWM
I
F(AV)
1N 5550U S 1N 5551U S 1N 5552U S 1N 5553U S
1N 5554U S
Units
V
A
200
400
600
5.0
800
1000
I
FRM
25
A
I
FSM
T
STG
100
150
-65 to +175
A
°C
Revision: August 22nd, 2011
1
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