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DD89N14KKHPSA1

Description
DIODE ARRAY MOD 1200V 140A
CategoryDiscrete semiconductor    diode   
File Size238KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DD89N14KKHPSA1 Overview

DIODE ARRAY MOD 1200V 140A

DD89N14KKHPSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionR-XUFM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current2400 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current89 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage1400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD89N
DD89N
DD89N..K..-K
ND89N
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
V
RSM
I
FRMSM
1200
1600
1300
1700
1400 V
1800 V
1500 V
1900 V
140 A
89 A
2.800 A
2.400 A
39.200 A²s
28.800 A²s
T
vj
= +25°C... T
vj max
T
C
= 100°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 300 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,5 V
0,75 V
2,3 mΩ
max.
20 mA
3,0 kV
2,5 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin R
thJC
pro Zweig / per arm,
Θ
= 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
pro Modul / per Module
pro Zweig / per arm
R
thCH
T
vj max
T
c op
T
stg
max.
max.
max.
max.
max.
max.
0,225
0,450
0,215
0,430
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
prepared by: C. Drilling
approved by: M. Leifeld
date of publication:
revision:
0,05 °C/W
0,10 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
29.04.03
1
BIP AC / 91-04-17, K.Spec
A10/91
Seite/page
1/9

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